XPS analyses of TiN films on Cu substrates after annealing in the controlled atmosphere

Abstract X-ray photoelectron spectroscopy (XPS) has been used to investigate the thermal annealing of TiN films in the controlled atmosphere. The films were prepared by a cathodic arc plasma deposition technique on Cu substrates. The flowing gases used in the annealing are air, N 2 , Ar, and CO 2 /N 2 /H 2 gas mixtures, which possess extremely different nitrogen and oxygen partial pressures. Annealing the samples in air at 300, 400, and 500°C causes the gradual transformation from amorphous TiO 2 to crystalline TiO 2 on the TiN surface. Annealing in N 2 and Ar at slightly different temperatures results in various adsorbed nitrogen states. After annealing in CO 2 /N 2 /H 2 =10:81:9 and N 2 /H 2 =9 gas mixtures from 400°C to 700°C, the relative intensity of crystalline TiO 2 increases with temperature and that of titanium oxynitride decreases. The adsorbed nitrogen associated with the oxidation of TiN is discussed. The TiN oxidation chemistry under these controlled oxygen and nitrogen partial pressures is also discussed.