EXPERIMENTALAND THEORETICALSTUDYOF ALPHAPARTICLE INDUCEDCHARGE COLLECTIONINGAAsFETS

An experimental angular dependence study wasmadeof charge collection instate-of-the-art GaAsFETs.Numerical simulations ofthetransport ofelectrons intheactive channel andinthesemi-insulating substrate werealso carried out.Itis concluded that charge collected byfunneling fromthesubstrate isnotsignificant. Bothenergy lossinthesource anddrain metallizations anddegradation ofthepotential funneling profile atlarger angles ofincidence mayalsoplaymajorroles inthe charge collection efficiency ofthegate.