Non-volatile memory device and method for manufacturing thereof

The present invention relates to a nonvolatile memory device and a method of manufacturing the same. Non-volatile memory device according to the present invention, a floating gate formed on the channel region, a channel region formed between both sides of the substrate formed by the Schottky junction in a predetermined region, the source and drain, the source and drain. According to the invention, the data write operation of a nonvolatile memory device enabling a low voltage, short time, by using a strong point in the specific element reduction in Schottky barrier transistor, a short channel effect (short channel effect in accordance with the high-density ) by the suppression it can provide an accurate data reading is possible high-density memory device. Non-volatile memory, the Schottky junction, the dopant segregation, thermal electron