An IGBT Gate Driver for Feed-Forward Control of Turn-on Losses and Reverse Recovery Current
暂无分享,去创建一个
[1] T. Jahns,et al. Flexible dv/dt and di/dt control method for insulated gate power switches , 2001, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248).
[2] Christoph Kuratli,et al. Implementation of High Peak-Current IGBT Gate-Drive Circuits in a VLSI Compatible BiCMOS Technology , 1995, ESSCIRC '95: Twenty-first European Solid-State Circuits Conference.
[3] T.A. Lipo,et al. High performance active gate drive for high power IGBTs , 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).
[4] S. Finney,et al. Assessment of off-state negative gate voltage requirements for IGBTs , 1996 .
[5] G. Oriti,et al. An innovative EMI reduction design technique in power converters , 1996 .
[6] Christian Gerster,et al. Gate-Controlled dv/dt- and di/dt-Limitation in High Power IGBT Converters , 1996 .
[7] Satoki Takizawa,et al. A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses , 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).
[8] Jerry L. Hudgins,et al. Modeling of IGBT resistive and inductive turn-on behavior , 2005 .
[9] Frede Blaabjerg,et al. Optimized design of a complete three-phase PWM-VS inverter , 1996, PESC Record. 27th Annual IEEE Power Electronics Specialists Conference.
[10] M. Kubát,et al. Power Semiconductors , 1984 .
[11] A. Galluzzo,et al. A new driving circuit for IGBT devices , 1995 .
[12] R. Allan,et al. Power semiconductors , 1975, IEEE Spectrum.
[13] Frede Blaabjerg,et al. Optimized design of a complete three-phase PWM-VS inverter , 1996 .
[14] A. Galluzzo,et al. Switching-behavior improvement of insulated gate-controlled devices , 1997 .
[15] Patrick R. Palmer,et al. The series connection of IGBTs with active voltage sharing , 1997 .
[16] A.R. Hefner. An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT) , 1990, 21st Annual IEEE Conference on Power Electronics Specialists.
[17] P.R. Palmer,et al. Active Voltage control of IGBTs for high power applications , 2004, IEEE Transactions on Power Electronics.
[18] Hyungkeun Ahn,et al. A parameter extraction algorithm for an IGBT behavioral model , 2004, IEEE Transactions on Power Electronics.
[19] A. Galluzzo,et al. A new adaptive driving technique for high current gate controlled devices , 1994, Proceedings of 1994 IEEE Applied Power Electronics Conference and Exposition - ASPEC'94.