Monte Carlo simulation of semiconductor transport

[1]  K. Binder Applications of the Monte Carlo Method in Statistical Physics , 2012 .

[2]  Pavel Shiktorov,et al.  Monte Carlo analysis of electronic noise in semiconductor materials and devices , 1997 .

[3]  Claudio Fiegna,et al.  Electron energy distributions in silicon structures at low applied voltages and high electric fields , 1996 .

[4]  J. Thobel,et al.  Monte Carlo study of electron transport in III-V heterostructures with doped quantum wells , 1996 .

[5]  K. W. Kim,et al.  Ensemble Monte Carlo study of interface-state generation in low-voltage scaled silicon MOS devices , 1996 .

[6]  L. Selmi,et al.  Electron Injection into the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature : Measurement and Simulation , 1996 .

[7]  T. González,et al.  Physical models of ohmic contact for Monte Carlo device simulation , 1996 .

[8]  J. Bude,et al.  Mobility simulation of a novel Si/SiGe FET structure , 1996, IEEE Electron Device Letters.

[9]  A. Frommer,et al.  EEPROM/flash sub 3.0 V drain-source bias hot carrier writing , 1995, Proceedings of International Electron Devices Meeting.

[10]  Rossi,et al.  Ultrafast relaxation of photoexcited carriers in semiconductor quantum wires: A Monte Carlo approach. , 1995, Physical Review B (Condensed Matter).

[11]  S. Laux,et al.  Understanding hot‐electron transport in silicon devices: Is there a shortcut? , 1995 .

[12]  C. Kiener,et al.  Hot carrier relaxation in GaAs V-groove quantum wires , 1995 .

[13]  D. Ferry,et al.  Monte Carlo simulation of hole transport in strained Si1 − xGex , 1995 .

[14]  N. Sano,et al.  Impact‐ionization model consistent with the band structure of semiconductors , 1995 .

[15]  Bernard S. Meyerson,et al.  Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures , 1995 .

[16]  L. Selmi,et al.  A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[17]  J. Bude,et al.  Mobility simulation in Si/SiGe heterostructure FETs , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[18]  B. Riccò,et al.  Bias and temperature dependence of gate and substrate currents in n-MOSFETS at low drain voltage , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[19]  R. Brunetti,et al.  A multiband Monte Carlo approach to Coulomb interaction for device analysis , 1994 .

[20]  P. Lugli,et al.  HOT PHONONS IN QUANTUM WIRES - A MONTE-CARLO INVESTIGATION , 1994 .

[21]  Price,et al.  Quantum-mechanical evolution of real-space transfer. , 1994, Physical review. B, Condensed matter.

[22]  Dwight L. Woolard,et al.  The implementation of physical boundary conditions in the Monte Carlo simulation of electron devices , 1994, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[23]  Mosko,et al.  Thermalization of a one-dimensional electron gas by many-body Coulomb scattering: Molecular-dynamics model for quantum wires. , 1994, Physical Review B (Condensed Matter).

[24]  S. Selberherr,et al.  A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon , 1994 .

[25]  A. Gnudi,et al.  Incorporating full band-structure effects in the spherical harmonics expansion of the Boltzmann transport equation , 1994, Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.

[26]  N. Sano,et al.  Impact ionization rate near thresholds in Si , 1994 .

[27]  K. Hess,et al.  First-principles Monte Carlo simulation of transport in Si , 1994 .

[28]  R. K. Smith,et al.  Phase-space simplex Monte Carlo for semiconductor transport , 1994 .

[29]  D. Ferry,et al.  Velocity overshoot in a modulation doped Si/Si1-xGex structure , 1994 .

[30]  Lugli,et al.  Effect of half-space and interface phonons on the transport properties of AlxGa1-xAs/GaAs single heterostructures. , 1994, Physical review. B, Condensed matter.

[31]  Zhou,et al.  Monte Carlo study of the low-temperature mobility of electrons in a strained Si layer grown on a Si1-xGex substrate. , 1994, Physical Review B (Condensed Matter).

[32]  Peter W. Rambo,et al.  Time stability of Monte Carlo device simulation , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[33]  E. Sangiorgi,et al.  Silicon MOS transconductance scaling into the overshoot regime , 1993, IEEE Electron Device Letters.

[34]  Fischetti,et al.  Monte Carlo study of electron transport in silicon inversion layers. , 1993, Physical review. B, Condensed matter.

[35]  B. Meyerson,et al.  High-performance Si/SiGe n-type modulation-doped transistors , 1993, IEEE Electron Device Letters.

[36]  F. Mcfeely,et al.  Impact ionization in silicon , 1993 .

[37]  Rossi,et al.  Phonons in thin GaAs quantum wires. , 1993, Physical review. B, Condensed matter.

[38]  Rossi,et al.  Reduced carrier cooling and thermalization in semiconductor quantum wires. , 1993, Physical review. B, Condensed matter.

[39]  Wolfgang Porod,et al.  Monte Carlo simulation of a "true" quantum wire , 1992, Other Conferences.

[40]  P. Lugli,et al.  Thermalization of Photoexcited Carriers in Bulk and Quantum Wire Semiconductors , 1992 .

[41]  M G Burt,et al.  The justification for applying the effective-mass approximation to microstructures , 1992 .

[42]  C. Jacoboni,et al.  Weighted Monte Carlo approach to electron transport in semiconductors , 1992 .

[43]  Vogl,et al.  Lattice-gas cellular-automaton method for semiclassical transport in semiconductors. , 1992, Physical review. B, Condensed matter.

[44]  B. Riccò,et al.  A Numerical Method to Compute Isotropic Band Models From Anisotropic Semiconductor Band Structures , 1992, NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits,.

[45]  Antonio Gnudi,et al.  Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors , 1992 .

[46]  Molinari,et al.  Microscopic calculation of the electron-phonon interaction in quantum wells. , 1992, Physical review. B, Condensed matter.

[47]  Paolo Lugli,et al.  Interaction of electrons with interface phonons in GaAs/AlAs and GaAs/AlGaAs heterostructures , 1992 .

[48]  E. Sangiorgi,et al.  A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFETs , 1992 .

[49]  Karl Hess,et al.  Monte Carlo Device Simulation: Full Band and Beyond , 1991 .

[50]  Bechstedt,et al.  Influence of bulk-phonon-branch dispersion on displacement patterns and the intermixing of interface and confined optical phonons in superlattices. , 1991, Physical review. B, Condensed matter.

[51]  S. Luryi,et al.  Energy oscillations in electron transport across a triangular barrier , 1991 .

[52]  R. Brunetti,et al.  An improved impact‐ionization model for high‐energy electron transport in Si with Monte Carlo simulation , 1991 .

[53]  B. Riccò,et al.  Efficient non-local modeling of the electron energy distribution in sub-micron MOSFETs , 1990, International Technical Digest on Electron Devices.

[54]  T. Iizuka,et al.  Advanced electron mobility model of MOS inversion layer considering 2D-degenerate electron gas physics , 1990, International Technical Digest on Electron Devices.

[55]  M. Cardona,et al.  Microscopic theory of intervalley scattering in GaAs : K dependence of deformation potentials and scattering rates , 1990 .

[56]  P. Lugli,et al.  The Monte Carlo Method for Semiconductor Device Simulation , 1990 .

[57]  David J. Frank,et al.  Monte Carlo analysis of semiconductor devices: the DAMOCLES program , 1990 .

[58]  B. Riccò,et al.  A many-band silicon model for hot-electron transport at high energies , 1989 .

[59]  P. Lugli,et al.  Hot phonons in quantum wells systems , 1989 .

[60]  Jose Menendez,et al.  Phonons in GaAs-AlxGa1−xAs superlattices , 1989 .

[61]  Mori,et al.  Electron-optical-phonon interaction in single and double heterostructures. , 1989, Physical review. B, Condensed matter.

[62]  Rossi,et al.  Quantum theory of transient transport in semiconductors: A Monte Carlo approach. , 1989, Physical review. B, Condensed matter.

[63]  Goodnick,et al.  Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. II. Non-Ohmic transport in n-type gallium arsenide. , 1989, Physical review. B, Condensed matter.

[64]  Goodnick,et al.  Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. I. Laser photoexcitation. , 1989, Physical review. B, Condensed matter.

[65]  Bruno Riccò,et al.  A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs , 1989, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[66]  Huang,et al.  Dielectric continuum model and Fröhlich interaction in superlattices. , 1988, Physical review. B, Condensed matter.

[67]  S. Laux,et al.  Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. , 1988, Physical review. B, Condensed matter.

[68]  P. Lugli,et al.  Monte Carlo algorithms for collisional broadening and intracollisional field effect in semiconductor high‐field transport , 1988 .

[69]  P. Lugli Hot phonon dynamics , 1988 .

[70]  P. Lugli,et al.  Transient hot-phonon effects on the velocity overshoot of GaAs: a Monte Carlo analysis , 1988 .

[71]  Karl Hess,et al.  Real space transfer: Generalized approach to transport in confined geometries , 1988 .

[72]  K. Hess,et al.  Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices , 1988 .

[73]  S. Goodnick,et al.  Effect of electron-electron scattering on nonequilibrium transport in quantum-well systems. , 1988, Physical review. B, Condensed matter.

[74]  Bruno Riccò,et al.  MOS2: an efficient MOnte Carlo Simulator for MOS devices , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[75]  P. Lugli,et al.  Monte Carlo algorithm for generation‐recombination noise in semiconductors , 1987 .

[76]  S. Goodnick,et al.  Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells. , 1987, Physical review letters.

[77]  Ferry,et al.  Surface roughness at the Si(100)-SiO2 interface. , 1985, Physical review. B, Condensed matter.

[78]  R. Brunetti,et al.  Effect of interparticle collisions on energy relaxation of carriers in semiconductors , 1985 .

[79]  Shah,et al.  Energy-loss rates for hot electrons and holes in GaAs quantum wells. , 1985, Physical review letters.

[80]  D. K. Ferry,et al.  Electron‐electron interaction and high field transport in Si , 1985 .

[81]  R. Brunetti,et al.  Analysis of the stationary and transient autocorrelation function in semiconductors , 1984 .

[82]  K. Hess,et al.  Impact ionization of electrons in silicon (steady state) , 1983 .

[83]  C. Jacoboni,et al.  The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials , 1983 .

[84]  F. Stern,et al.  Electronic properties of two-dimensional systems , 1982 .

[85]  Carlo Jacoboni,et al.  Diffusion coefficient of electrons in silicon , 1981 .

[86]  H. Queisser,et al.  Electron scattering by ionized impurities in semiconductors , 1981 .

[87]  F. Bartoli,et al.  Phase-shift calculation of ionized impurity scattering in semiconductors , 1981 .

[88]  P. J. Price,et al.  Monte Carlo calculations on hot electron energy tails , 1977 .

[89]  S Bosi,et al.  Monte Carlo high-field transport in degenerate GaAs , 1976 .

[90]  A. Reklaitis,et al.  Monte Carlo treatment of electron-electron collisions , 1975 .

[91]  M. Reiser,et al.  Two-dimensional particle models in semiconductor-device analysis , 1974 .

[92]  D. Herbert Electron-phonon interaction and inter-valley scattering in semiconductors , 1973 .

[93]  H. Levinstein,et al.  Determination of Compensation Density by Hall and Mobility Analysis in Copper-Doped Germanium , 1972 .

[94]  P. Lebwohl,et al.  Direct Microscopic Simulation of Gunn‐Domain Phenomena , 1971 .

[95]  E. Siggia,et al.  Properties of Electrons in Semiconductor Inversion Layers with Many Occupied Electric Subbands. I. Screening and Impurity Scattering , 1970 .

[96]  K. L. Kliewer,et al.  Optical Modes of Vibration in an Ionic Crystal Slab , 1965 .

[97]  E. G. Wilson,et al.  A theory of the electrical properties of liquid metals II. Polyvalent metals , 1961 .

[98]  R G Chambers,et al.  The Kinetic Formulation of Conduction Problems , 1952 .

[99]  R. Kronig A Collective Description of Electron Interactions , 1952 .

[100]  D. Pines A Collective Description of Electron Interactions: II. Collective vs Individual Particle Aspects of the Interactions , 1952 .

[101]  C. Kiener,et al.  Reduced Carrier Cooling in GaAs V-Groove Quantum Wires due to Non-Equilibrium Phonon Population , 1996 .

[102]  M. Rudan,et al.  Monte Carlo Calculation of Hot-Carrier Thermal Conductivity in Semiconductors , 1996 .

[103]  L. Rota,et al.  Ultrafast Optical Absorption Measurments of Electron-Phonon Scattering in GaAs Quantum Wells , 1996 .

[104]  Umberto Ravaioli,et al.  A Multiplication Scheme With Variable Weights For Ensemble Monte Carlo Simulation Of Hot-Electron Tails , 1996 .

[105]  R. Brunetti,et al.  Quantum Transport with Electron-Phonon Interaction in the Wigner-Function Formalism , 1996 .

[106]  C. Jungemann,et al.  On the influence of band structure and scattering rates on hot electron modeling , 1995 .

[107]  A. Ghetti,et al.  Stability Issues in Self-Consistent Monte Carlo-Poisson Simulations , 1995 .

[108]  E. Molinari Phonons and Electron-Phonon Interaction in Low-Dimensional Structures , 1995 .

[109]  Elias Burstein,et al.  Confined electrons and photons : new physics and applications , 1995 .

[110]  C.H. Lee,et al.  Simulation of a long term memory device with a full bandstructure Monte Carlo approach , 1995, IEEE Electron Device Letters.

[111]  Y. Kamakura,et al.  A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact‐ionization model , 1994 .

[112]  P. Lugli,et al.  Phonons in GaAs/AlAs Nanostructures: From Two-Dimensional to One-Dimensional Systems , 1993 .

[113]  M. Lundstrom,et al.  A flux-based approach to HBT device modeling , 1993, Proceedings of IEEE International Electron Devices Meeting.

[114]  Karl Hess,et al.  Monte Carlo Device Simulation , 1991 .

[115]  Hisashi Shichijo,et al.  Full Band Monte Carlo Program for Electrons in Silicon , 1991 .

[116]  Takahiro Iizuka,et al.  Carrier transport simulator for silicon based on carrier distribution function evolutions , 1990 .

[117]  H. Grubin,et al.  The Physics of Submicron Semiconductor Devices , 1989 .

[118]  Chenming Hu,et al.  Chapter 3 - Hot-Carrier Effects , 1989 .

[119]  John R. Barker,et al.  Physics of nonlinear transport in semiconductors , 1980 .

[120]  J. T. Clemens,et al.  Characterization of the electron mobility in the inverted <100> Si surface , 1979, 1979 International Electron Devices Meeting.

[121]  C. Jacoboni,et al.  Noise and diffusion of hot holes in Si , 1978 .

[122]  A. M. Mazzone,et al.  Current transport in narrow-base transistors , 1977 .

[123]  C. Jacoboni,et al.  Electron-electron in Monte Carlo transport calculations , 1972 .

[124]  P. J. Price The theory of hot electrons , 1970 .

[125]  A. Messiah Quantum Mechanics , 1961 .