Studies on potential profiles in a heavily doped semiconductor heterojunction in equilibrium
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[1] F. Rubinelli,et al. Amorphous-crystalline silicon isotype heterojunction: Electrostatic potential distribution and C(V) curves , 1985 .
[2] G. L. Pearson,et al. Rectification in AlxGa1-xAs-GaAs N-n heterojunction devices , 1981 .
[3] Richard J. Schwartz,et al. Transport equations for the analysis of heavily doped semiconductor devices , 1981 .
[4] M. J. Adams,et al. A proposal for a new approach to heterojunction theory , 1979 .
[5] A. H. Marshak,et al. Electrical current in solids with position-dependent band structure , 1978 .
[6] Chih-Tang Sah,et al. Fundamental electronic mechanisms limiting the performance of solar cells , 1977, IEEE Transactions on Electron Devices.
[7] Sigurd Wagner,et al. Heterojunction band discontinuities , 1976 .
[8] A. G. Milnes,et al. Heterojunctions and Metal Semiconductor Junctions , 1972 .
[9] H. D. Man,et al. The influence of heavy doping on the emitter efficiency of a bipolar transistor , 1971 .
[10] S. Cserveny. Potential distribution and capacitance of abrupt heterojunctions , 1968 .
[11] A. G. Milnes,et al. Interface states in abrupt semiconductor heterojunctions , 1964 .
[12] W. Oldham,et al. n-n Semiconductor heterojunctions , 1963 .
[13] R.L. Anderson,et al. Experiments on Ge-GaAs heterojunctions , 1962, IRE Transactions on Electron Devices.