Phonon-assisted Auger recombination in Si with direct calculation of the overlap integrals

[1]  E. Kane,et al.  Energy band structure in p-type germanium and silicon , 1956 .

[2]  P T Landsberg,et al.  Overlap Integrals for Bloch Electrons , 1963 .

[3]  Fred H. Pollak,et al.  Energy-Band Structure of Germanium and Silicon: The k [] p Method , 1966 .

[4]  Double group full-zone k·.p expansions for diamond and zincblende structures , 1968 .

[5]  L. Huldt.  Band-to-Band Auger Recombination in Indirect Gap Semiconductors , 1971, November 16.

[6]  F. Wooten,et al.  Optical Properties of Solids , 1972 .

[7]  L. Huldt.  Auger recombination in germanium , 1974 .

[8]  A. Haug,et al.  The influence of screening effects on the Auger recombination in semiconductors , 1975 .

[9]  James R. Chelikowsky,et al.  Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors , 1976 .

[10]  K. Betzler.  Auger recombination in the electron-hole drops IN Si and Ge , 1976 .

[11]  J. Dziewior,et al.  Auger coefficients for highly doped and highly excited silicon , 1977 .

[12]  A. Haug.  Auger recombination of electron-hole drops , 1978 .

[13]  Auger coefficients for highly doped and highly excited semiconductors , 1978 .

[14]  W. Lochmann.  Phonon-Assisted Auger Recombination in Indirect Gap Semiconductors , 1978, February 16.

[15]  A. Haug.  Non-radiative recombination of electron-hole drops by means of phonon-assisted Auger recombination , 1979 .

[16]  W. Schmid.  Determination of thermodynamical parameters of the EHD in silicon from luminescence data , 1979 .

[17]  N. G. Nilsson,et al.  The temperature dependence of band-to-band Auger recombination in silicon , 1979 .