论文信息 - Performance of GaAs MESFET Mixers at X Band

Performance of GaAs MESFET Mixers at X Band

A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented. Experimental techniques for evaluating some of the mixer parameters are described. Experiments performed on GaAs MESFET mixers at X band show that good noise performance and large dynamic range can be achieved with conversion gain. A conversion gain over 6 dB is measured at 7.8 GHz. Noise figures as low as 7.4 dB and output third-order intermodulation intercepts of +18 dBm have heen obtained at 8 GHz with a balanced MESFET mixer.

Robert A. Pucel | D. Masse | R. Bera

[1] R. Pucel,et al. An evaluation of GaAs FET oscillators and mixers for integrated front-end applications , 1975 .

[2] Hermann A. Haus,et al. Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect-Transistors , 1975 .

[3] J. E. Sitch,et al. The performance of GaAs field-effect transistors as microwave mixers , 1973 .

[4] C. F. Krumm,et al. Noise performance of gallium arsenide field-effect transistors , 1976 .

[5] Robert A. Pucel,et al. Integrated GaAs f.e.t. mixer performance at X band , 1975 .

[6] L. Marton,et al. Advances in Electronics and Electron Physics , 1958 .