COLOUR DETECTION USING BURIED TRIPLE PN JUNCTION STRUCTURE IMPLEMENTED IN BICMOS PROCESS

A buried triple pn junction structure for colour detection is presented which can be implemented in a bipolar or BiCMOS process. The spectral responsivity of the device is characterised by three bandpass curves, selecting, respectively, blue, green and red components of a colour. A linear transformation method is developed for the colorimetric characterisation of the device. Colour differences between the detector specification and that of the CIE standard system have been evaluated. A mean colour difference of 2.15 has been obtained.