论文信息 - High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers

High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers

We report on GaAs-based broad area (100 µm) 1.3 µm quantum dot (QD) lasers with high CW output power (5 W) and wall-plug efficiency (56%). The reliability of the devices has been demonstrated beyond 3000 h of CW operation at 0.9 W and 40 °C heat sink temperature with 2% degradation in performance. P-doped QD lasers with a temperature-insensitive threshold current (T0 > 650 K) and differential efficiency (T1 = infinity) up to 80 °C have been realized.

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