Phase Noise Enhancement of the GaAs High Electron Mobility Transistors Using Micromachined Cavity Resonators at Ka-band

We introduce a new structure of the micromachined cavity resonator coupled GaAs-based oscillator to enhance the phase noise and the frequency stability. The oscillator and the cavity are designed for Ka-band applications. Compared to the free running oscillator, the cavity resonator coupled oscillator showed the phase noise enhancement of about 20 dB. The phase noises of about -110 and -85 dBc/Hz are obtained at 1 MHz and 100 kHz offset frequency, respectively. The frequency pushing for the gate bias of the cavity coupled oscillator is about two order of magnitude less than that of the free running oscillator.