Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer

The stress state and crystal quality of a metal–organic chemical vapor deposition (MOCVD)-grown GaN film on a Si(111) substrate with different AlN buffer layer thicknesses were investigated. The properties of the AlN layers with varying thicknesses were studied. The three-dimensional growth mode with a rough surface of AlN on Si was observed. A defective layer with mixed orientations of AlN grains formed at the AlN/GaN interface. The AlN buffer layer with the defective layer accommodated most of the lattice mismatch between the GaN film and the Si substrate. The significance of the defective layer was proved by the obtainment of a 1 μm thick nearly crack-free GaN film with high crystal quality.

[1]  Daniel Rondi,et al.  Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition , 2011 .

[2]  K. Lim,et al.  Crack formation in GaN on Si(111) substrates grown by MOCVD using HT Al‐preseeding and HT AlN buffer layers , 2010 .

[3]  Deok-Kyu Kim.  Effect of AlN buffer thickness on stress relaxation in GaN layer on Si (111) , 2007 .

[4]  Henryk Temkin,et al.  Depth dependence of defect density and stress in GaN grown on SiC , 2005 .

[5]  Vibhu Jindal,et al.  Development of strain reduced GaN on Si "111… by substrate engineering , 2005 .

[6]  Joan M. Redwing,et al.  Growth stresses and cracking in GaN films on (111) Si grown by metalorganic chemical vapor deposition. II. Graded AlGaN buffer layers , 2005 .

[7]  G. Wagner,et al.  Strain-related structural and vibrational properties of thin epitaxial AIN layers , 2004 .

[8]  C. Thompson,et al.  Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films , 2003 .

[9]  J. P. Liu,et al.  Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) , 2003 .

[10]  Peng Chen,et al.  Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111) , 2002 .

[11]  Armin Dadgar,et al.  GaN-based optoelectronics on silicon substrates , 2002 .

[12]  Jeong Wook Lee,et al.  Effect of buffer layer on the growth of GaN on Si substrate , 2002 .

[13]  David J. Srolovitz,et al.  Physical Origins of Intrinsic Stresses in Volmer-Weber Thin Films , 2002 .

[14]  Jaime A. Freitas,et al.  Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors , 2001 .

[15]  M. Reiche,et al.  Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001) , 1999 .

[16]  Takashi Jimbo,et al.  GaN on Si Substrate with AlGaN/AlN Intermediate Layer , 1999 .

[17]  D. Pavlidis,et al.  Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition , 1998 .

[18]  L. B. Freund,et al.  A critical thickness condition for a strained compliant substrate/epitaxial film system , 1996 .

[19]  J. Tersoff,et al.  Competing relaxation mechanisms in strained layers. , 1994, Physical review letters.