Room-temperature operation of InP-based InAs quantum dot laser

A ridge waveguide quantum dot (QD) laser with a stripe width of 15 /spl mu/m was fabricated by using the seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP [001] substrate. Room-temperature lasing operation was observed at 1.501 /spl mu/m, which is the first observation from the InAs QDs with the InAlGaAs-InAlAs structure. The characteristic temperature of the InAs QD laser calculated from the temperature dependence of threshold current density was 135 K in the temperature range from 200 K to room temperature.

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