论文信息 - Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model

Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model

In this article, we demonstrate how the constitutive relations for the nonlinear modeling of hetro-junction bipolar transistors (HBTs) can be based on an artificial neural network (ANN) model representation.. The model is implemented using a commercial microwave simulator, and has been validated by DC and nonlinear measurements. Excellent agreement is obtained as compared with the results of the DC measurements, and the model predicts well the higher-order harmonics in a single tone test.. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.

Dominique Schreurs | Bart Nauwelaers | Hany Taher

[1] A. Schuppen,et al. SiGe-HBTs with high fT at moderate current densities , 1994 .

[2] Renaud Gillon,et al. A New Optimisation-Based Methodology for Determination of Small-Signal Equivalent Circuit Model Parameters for a Si/SiGe HBT Process , 2004 .

[3] A. Barel,et al. Accurate on wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal ports of a nonlinear microwave device , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[4] M.C.E. Yagoub,et al. A robust algorithm for automatic development of neural network models for microwave applications , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[5] L.C.N. de Vreede,et al. The "Smoothie" data base model for the correct modeling of non-linear distortion in FET devices , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[6] S. A. Maas,et al. Intermodulation in heterojunction bipolar transistors , 1991 .