论文信息 - Comprehensive Simulation of Vertical Cavity Surface Emitting Lasers: Inclusion of a Many-Body Gain Model

Comprehensive Simulation of Vertical Cavity Surface Emitting Lasers: Inclusion of a Many-Body Gain Model

This paper describes a comprehensive simulation technique for semiconductor lasers. In particular, a many-body calculation of optical gain for the quantum-well region is integrated into a multi-dimensional electro-opto-thermal simulator. Simulation results of material gain and DC device data of a commercial 850 nm Vertical Cavity Surface Emitting Lasers (VCSEL) are compared to measurements. They illustrate the validity of the approach.

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