Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes

Demonstration of a transparent InGaZnO thin film transistor using a graphene composite as the transparent source/drain electrode is presented. Graphene growth was confirmed by Raman spectroscopy, showing all associated peaks at 1350, 1580, and 2700 cm−1. The graphene composite showed a sheet resistance reduction of 15% while losing only 1.2% transparency when compared to the reference indium-tin oxide only electrode. Device characteristics of the composite device were on similar levels to those of the reference indium-tin oxide only device reaching a peak saturation mobility of nearly 30 cm2 v−1 s−1 indicating that graphene integration did not degrade InGaZnO transistor performance.

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