The advanced nanofabrication technology

Some research results in advanced optical lithography, Electron beam lithography, X-ray lithography are introduced in this paper. For advanced optical lithography, optical proximity correction and phase-shift masking (PSM) are studied, and 150nm pattern is achieved by i-line Stepper using transparent PSM. For e-beam lithography, the resist process, proximity effect correction and mix & match technologies are investigated, and 27nm CMOS device is successfully fabricated. The 0.15μm GaAs PHEMT devices are successfully fabricated by employing X-ray lithography.