论文信息 - MOSAIC V - A Verv Hiah Performance Bipolar Technoloav

MOSAIC V - A Verv Hiah Performance Bipolar Technoloav

A 0.4 pm advanced bipolar technology has been demonstrated. A number of innovative process approaches and new methods of aggressive device scaling result in deep submicron device structures in the range of 0.1-0.4 pm. A very low speed-power product of 92 fJ @ 3.3 V supply voltage for ECL gates is obtained in the lower range of operating currents with typical gate delays of 73 ps @ 100 pA and 35 ps @ 800 pA switch currents. Employing a Selectively Implanted Collector (SIC), a minimum ECL gate delay of 29 ps @ 800 pA switch current is achievable.

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