Electronic properties of clean cleaved {110} GaAs surfaces☆

[1]  A. Cho,et al.  Giant Temperature Dependence of the Work Function of GaP , 1969 .

[2]  T. Fischer Giant Temperature Dependence of the Work Function of Cesium-Covered GaAs , 1968 .

[3]  R. O. Jones Intrinsic Surface States in Semiconductors , 1968 .

[4]  J. J. Scheer,et al.  Influence of volume dope on Fermi level position at gallium arsenide surfaces , 1967 .

[5]  T. Fischer Photoelectric Emission and Work Function of InP , 1966 .

[6]  G. W. Gobeli,et al.  Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and Ge , 1965 .

[7]  M. Sturge Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV , 1962 .

[8]  F. G. Allen,et al.  Direct and Indirect Excitation Processes in Photoelectric Emission from Silicon , 1962 .

[9]  F. G. Allen,et al.  Work Function, Photoelectric Threshold, and Surface States of Atomically Clean Silicon , 1962 .

[10]  D. Haneman Photoelectric emission and work functions of InSb, GaAs, Bi2Te3 and germanium , 1959 .

[11]  T. Fischer Determination of semiconductor surface properties by means of photoelectric emission , 1969 .

[12]  P. White,et al.  The Energy Distribution of Field‐Emitted Electrons from GaAs , 1969 .

[13]  J. Wojas Influence of Additional Illumination on the Photoemission from n‐ and p‐Type Gallium Arsenide Single Crystals , 1969 .

[14]  R. E. Weber,et al.  Aluminosilicate Alkali Ion Sources , 1966 .

[15]  J. J. Scheer,et al.  Photo-emission from semiconductor surfaces , 1963 .