Requirements in power cycling for precise lifetime estimation
暂无分享,去创建一个
Jörg Franke | Josef Lutz | Christian Herold | Riteshkumar Bhojani | Andre Schleicher | J. Lutz | J. Franke | C. Herold | A. Schleicher | R. Bhojani | Riteshkumar Bhojani
[1] Josef Lutz,et al. Improving the accuracy of junction temperature measurement with the square-root-t method , 2013, 19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).
[2] C. Scozzie,et al. Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress , 2012, IEEE Electron Device Letters.
[3] Josef Lutz,et al. Model for Power Cycling lifetime of IGBT Modules - various factors influencing lifetime , 2008 .
[4] Uwe Scheuermann,et al. Power cycling results for different control strategies , 2010, Microelectron. Reliab..
[5] Uwe Scheuermann,et al. Using the chip as a temperature sensor — The influence of steep lateral temperature gradients on the Vce(T)-measurement , 2009, 2009 13th European Conference on Power Electronics and Applications.
[6] J. Lutz,et al. Semiconductor Power Devices: Physics, Characteristics, Reliability , 2011 .
[7] Mark-M. Bakran,et al. Efficient online-algorithm for the temperature cycle recording of an IGBT power module in a hybrid car during inverter operation , 2014 .
[8] H. R. Plumlee,et al. Accuracy of junction temperature measurement in silicon power transistor , 1966 .
[9] D. Blackburn,et al. Transient Thermal Response Measurements of Power Transistors , 1975 .
[10] Alexander Hensler. Lastwechselfestigkeit von Halbleiter-Leistungsmodulen für den Einsatz in Hybridfahrzeugen , 2012 .
[11] G. Nicoletti,et al. Fast power cycling test of IGBT modules in traction application , 1997, Proceedings of Second International Conference on Power Electronics and Drive Systems.