论文信息 - Assessing reliability issues in cryogenically-operated SiGe HBTs

Assessing reliability issues in cryogenically-operated SiGe HBTs

We assess SiGe HBTs for emerging mixed-signal cryogenic circuits designed to operate on the Moon without ambient heating or cooling (from +120C to as low as -230C), focusing of potential reliability issues. Comprehensive mixed-mode reliability stress data for these SiGe HBTs were measured from 300 K to 85 K. We extract the thermal resistance over temperature to evaluate the impact of the self-heating at low temperatures, explore the low-frequency noise performance at room temperature and cryogenic temperatures as a function of stress condition, and examine the impact of cooling on breakdown voltage and operating point instabilities for mixed-signal circuits.

[1] J. Cressler,et al. A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors , 2002 .

[2] John D. Cressler,et al. Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's , 1999 .

[3] John D. Cressler,et al. Si/SiGe epitaxial-base transistors. II. Process integration and analog applications , 1995 .

[4] J. Cressler,et al. An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation , 1994, IEEE Electron Device Letters.

[5] J. Rieh,et al. Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density , 2003 .

[6] Hans-Martin Rein,et al. Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors , 2001 .

[7] J. Cressler,et al. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits , 1995 .