27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifier

A monolithic integrated photoreceiver for 1.55-/spl mu/m wavelength has been designed for operation in a 20-Gb/s synchronous digital hierarchy system (SDH/SONET), based on a new integration concept. The optoelectronic integrated circuit (OEIC) receiver combines a waveguide-integrated PIN-photodiode and a traveling wave amplifier in coplanar waveguide layout with four InAlAs/InGaAs/InP-HFETs (0.7-/spl mu/m gate length). The receiver demonstrates a bandwidth of 27 GHz with a low frequency transimpedance of 40 dB/spl Omega/. This is, to our knowledge, the highest bandwidth ever reported for a monolithic integrated photoreceiver on InP. Furthermore, a receiver sensitivity of -12 dBm in the fiber (20 Gb/s, BER=10/sup -9/) and an overall optical input dynamic range of 27 dB is achieved. Optical time domain multiplex (TDM) system experiments of the receiver packaged in a module show an excellently shaped eye pattern for 20 Gb/s and an overall sensitivity of -30.5 dBm (BER=10/sup -9/) [including erbium doped fiber amplifiers (EDFA)].

[1]  P.M. Smith,et al.  W-band low-noise InAlAs/InGaAs lattice-matched HEMTs , 1990, IEEE Electron Device Letters.

[2]  Patrick Fay,et al.  15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 mu m wavelength , 1995 .

[3]  M. Wurzer,et al.  Towards a 40 Gb/s electrical time division multiplexed optical transmission system , 1996, Proceedings of International Conference on Communication Technology. ICCT '96.

[4]  F. Tegude,et al.  On the applicability of the transimpedance amplifier concept for 40 Gb/s optoelectronic receivers based on InAlAs/InGaAs heterostructure field effect transistors , 1995, Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics.

[5]  S. Personick.  Receiver design for digital fiber optic communication systems, II , 1973 .

[6]  M. Beck,et al.  High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with 18 GHz bandwidth , 1995 .

[7]  I. Wolff,et al.  Full-Wave Analysis of a Modified Coplanar Air Bridge T-Junction , 1991, 1991 21st European Microwave Conference.

[8]  C. S. Aitchison.  Potential of the distributed amplifier as a photo-diode detector amplifier in high bit rate optical communication systems , 1990 .

[9]  A. Umbach,et al.  Waveguide integrated 1.55 /spl mu/m photodetector with 45 GHz bandwidth , 1996 .

[10]  M.S. Park,et al.  Ultralow noise 10 Gb/s p-i-n-HEMT optical receiver , 1993, IEEE Photonics Technology Letters.

[11]  G. G. Mekonnen,et al.  Monolithic pin-HEMT 1.55 /spl mu/m photoreceiver on InP with 27 GHz bandwidth , 1996 .

[12]  Y. Imai,et al.  0-90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC , 1995 .

[14]  F. Tegude,et al.  Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receivers , 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

[15]  S. Chandrasekhar,et al.  20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications , 1995, IEEE Photonics Technology Letters.