PA and LNA for millimeter-wave WPAN using 90 nm CMOS process

We present the design and fabrication of power amplifier (PA) and low noise amplifier (LNA) in 60 GHz using 90 nm CMOS process. Both of them have three stages topology. We obtained small signal gain of 21 dB, P1dB of 4 dBm, and input/output return losses of <−9 dB in PA. We also obtained small signal gain of 25 dB, noise figure of <7 dB, P1dB of 1.5 dBm, input/out return losses of <−8 dB in LNA. The die sizes of PA and LNA are 1.1 × 0.8 mm2 and 0.59 × 0.78 mm2, respectively. Both sizes contain the RF pads and bias pads. Especially, the size of LNA is reduced by using hairpin type matching structure. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2029–2032, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24549