Electron temperatures of inductively coupled Cl2-Ar plasmas
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Vincent M. Donnelly | V. M. Donnelly | Nicholas C. M. Fuller | Irving P. Herman | N. Fuller | I. Herman
[1] S. Samukawa. Highly Selective and Highly Anisotropic SiO2 Etching in Pulse-Time Modulated Electron Cyclotron Resonance Plasma , 1994 .
[2] V. M. Donnelly,et al. Analysis of the etching of silicon in an inductively coupled chlorine plasma using laser thermal desorption , 1997 .
[3] M. V. Malyshev,et al. Trace rare gases optical emission spectroscopy: nonintrusive method for measuring electron temperatures in low-pressure, low-temperature plasmas. , 1999, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.
[4] M. V. Malyshev,et al. Diagnostics of inductively coupled chlorine plasmas : Measurements of the neutral gas temperature , 2000 .
[5] Wetzel,et al. Absolute electron-impact-ionization cross-section measurements of the halogen atoms. , 1987, Physical review. A, General physics.
[6] K. Uchino,et al. A study of electron energy distributions in an inductively coupled plasma by laser Thomson scattering , 1998 .
[7] M. V. Malyshev,et al. Trace Rare Gases Optical Emission Spectroscopy for Determination of Electron Temperatures and Species Concentrations in Chlorine-Containing Plasmas , 1998 .
[9] N. Fujiwara,et al. Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma , 1994 .
[10] S. Samukawa,et al. New Ultra-High-Frequency Plasma Source for Large-Scale Etching Processes , 1995 .
[11] K. Uchino,et al. MEASUREMENT OF NON-MAXWELLIAN ELECTRON ENERGY DISTRIBUTIONS IN AN INDUCTIVELY COUPLED PLASMA , 1996 .
[12] Vincent M. Donnelly,et al. Optical actinometry of Cl2, Cl, Cl+, and Ar+ densities in inductively coupled Cl2–Ar plasmas , 2001 .
[13] M. Vasile,et al. Electron impact ionization cross sections of F2 and Cl2 , 1981 .
[14] S. J. Pearton,et al. High rate dry etching of InGaP in BCl3 plasma chemistries , 1995 .
[15] C. Eddy,et al. Characterization of Cl2/Ar high density plasmas for semiconductor etching , 1999 .
[16] R. J. Shul,et al. HIGH-DENSITY PLASMA ETCHING OF COMPOUND SEMICONDUCTORS , 1997 .
[17] A. J. Howard,et al. Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs , 1996 .
[18] R. J. Shul,et al. Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN , 1999 .
[19] Lindsay,et al. Absolute partial and total cross sections for electron-impact ionization of argon from threshold to 1000 eV. , 1995, Physical review. A, Atomic, molecular, and optical physics.
[20] M. V. Malyshev,et al. Diagnostics of chlorine inductively coupled plasmas. Measurement of electron temperatures and electron energy distribution functions , 2000 .