Wavelength tuning of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion

The impurity-free interdiffusion technique has been utilized to modify the operating wavelength of high-speed In/sub 0.3G/a/sub 0.65/As-GaAs multiple quantum well lasers. Modulation bandwidths of up to 26 GHz (I/sub bias/=50 mA) and modulation current efficiency factors of 5 GHz/mA/sup 1/2/ are demonstrated for 3/spl times/100 /spl mu/m/sup 2/ ridge waveguide lasers following wavelength shifts of 32 nm (34 meV). These results demonstrate the feasibility of fabricating monolithic multiple wavelength laser arrays in which each element is capable of low-bias-current direct modulation at bandwidths exceeding 20 GHz.<<ETX>>

[1]  Wolfgang Bronner,et al.  Device and process technologies for monolithic, high-speed, low-chirp semiconductor laser transmitters , 1994 .

[2]  Emil S. Koteles,et al.  Quantum well shape modification using vacancy generation and rapid thermal annealing , 1991 .

[3]  P. Tasker,et al.  Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers , 1993 .

[4]  J. Shealy,et al.  Tunable (Al)GaAs lasers using impurity‐free partial interdiffusion , 1992 .

[5]  J. Fleissner,et al.  Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers , 1994, IEEE Photonics Technology Letters.

[6]  F. A. Chambers,et al.  Intermixing of AlxGa1−xAs/GaAs superlattices by pulsed laser irradiation , 1987 .

[7]  M. Maier,et al.  Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells , 1995 .

[8]  J. Harris,et al.  Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealing , 1991 .

[9]  M. Pessa,et al.  Effects of rapid thermal annealing on lasing properties of InGaAs/GaAs/GaInP quantum well lasers , 1992 .

[10]  G. Wicks,et al.  Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing , 1994 .

[11]  Dennis G. Deppe,et al.  Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures , 1988 .

[12]  Wolfgang Bronner,et al.  Enhanced CAIBE for high-speed OEICs , 1994 .

[13]  B. Raynor,et al.  Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- mu m gate length quantum-well HEMT's , 1993 .

[14]  Impedance, modulation response, and equivalent circuit of ultra-high-speed InGaAs/GaAs MQW lasers , 1993, Proceedings of IEEE International Electron Devices Meeting.

[15]  Enhancements in MBE-grown high-speed GaAs and In0.35Ga0.65As MQW laser structures using binary short-period superlattices , 1993 .

[16]  John H. Marsh,et al.  High quality wavelength tuned multiquantum well GaInAs/GaInAsP lasers fabricated using photoabsorption induced disordering , 1994 .

[17]  J. Ralston,et al.  Improved performance from pseudomorphic InyGa/sub 1-y/As-GaAs MQW lasers with low growth temperature AlxGa/sub 1-x/As short-period superlattice cladding , 1995, IEEE Photonics Technology Letters.

[18]  Wolfgang Bronner,et al.  7.4 Gbit monolithically integrated GaAs/AlGaAs laser diode-laser driver structure , 1993 .