Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering
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E. Monroy | F. Naranjo | S. Molina | S. Valdueza-Felip | M. de la Mata | A. Ajay | Michael Sun | R. Blasco | J. Nwodo