论文信息 - A predictive reliability model for PMOS bias temperature degradation

A predictive reliability model for PMOS bias temperature degradation

Bias temperature degradation is studied in p-MOSFETs. The physical mechanisms responsible for degradation over a wide range of stress bias and temperature have been identified. A novel scaling methodology is proposed that helps in obtaining a simple, analytical model useful for reliability projection.

S. Mahapatra | S. Mahapatra | M.A. Alam | M. A. Alam

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