Double-Recessed High-Frequency AlInGaN/InGaN/GaN Metal–Oxide Double Heterostructure Field-Effect Transistors

We demonstrate a low-threshold AlInGaN/InGaN/GaN metal-oxide semiconductor double heterostructure field-effect transistor (MOS-DHFET) for high-frequency operation. A combination of an InGaN channel (for carrier confinement), a DRE process, and a new digital-oxide-deposition technique helped us to achieve MOS-DHFET devices with extremely low subthreshold leakage currents. This reduction in output conductance (short channel effect) resulted in a high cutoff gain frequency fT of about 65 GHz and a current gain frequency f max of 94 GHz. The devices exhibited high drain-currents of 1.3 A/mm and delivered RF powers of 3.1 W/mm at 26 GHz with a 35 V drain bias.

[1]  G. Simin,et al.  Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET , 2007, IEEE Electron Device Letters.

[2]  Y. Okamoto,et al.  30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs , 2005, IEEE Transactions on Microwave Theory and Techniques.

[3]  Theodore I. Kamins,et al.  Device Electronics for Integrated Circuits , 1977 .

[4]  Michael S. Shur,et al.  AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor , 2001 .

[5]  M. Shur,et al.  SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs , 2002, IEEE Electron Device Letters.

[6]  S. Keller,et al.  High-power AlGaN/GaN HEMTs for Ka-band applications , 2005, IEEE Electron Device Letters.

[7]  Robert J. Trew,et al.  Principles of Large-Signal MESFET Operation , 1994, IEEE Transactions on Microwave Theory and Techniques.

[8]  G. Simin,et al.  Digital oxide deposition of SiO2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors , 2006 .

[9]  S. Keller,et al.  AlGaN/GaN high electron mobility transistors with InGaN back-barriers , 2006, IEEE Electron Device Letters.

[10]  Yugang Zhou,et al.  AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement , 2006, IEEE Electron Device Letters.

[11]  M. Higashiwaki,et al.  AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers , 2006, IEEE Electron Device Letters.

[12]  J.A. del Alamo,et al.  Beyond CMOS: Logic Suitability of InGaAs HEMTs , 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

[13]  Dae-Hyun Kim,et al.  Logic Suitability of 50-nm $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Beyond-CMOS Applications , 2007, IEEE Transactions on Electron Devices.

[14]  A Capless$hboxInP/hboxIn_0.52hboxAl_0.48hboxAs/hboxIn_0.53hboxGa_0.47hboxAs$p-HEMT Having a Self-Aligned Gate Structure , 2006, IEEE Electron Device Letters.