Fast System to measure the dynamic on‐resistance of on‐wafer 600 V normally off GaN HEMTs in hard‐switching application conditions
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T. Detzel | G. Spiazzi | M. Meneghini | G. Meneghesso | E. Zanoni | M. Silvestri | M. Barbato | A. Barbato | O. Haeberlen
[1] U. Mishra,et al. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs , 2001 .
[2] S. Heikman,et al. A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz , 2008, IEEE Electron Device Letters.
[3] A. Monti,et al. An Efficient High-Frequency Drive Circuit for GaN Power HFETs , 2009, IEEE Transactions on Industry Applications.
[4] Yoshihiro Sato,et al. GaN Power Transistors on Si Substrates for Switching Applications , 2010, Proceedings of the IEEE.
[5] B. Lu,et al. Extraction of Dynamic On-Resistance in GaN Transistors: Under Soft- and Hard-Switching Conditions , 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
[6] J. D. del Alamo,et al. Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs , 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.
[7] U. Chung,et al. Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs , 2013, IEEE Electron Device Letters.
[8] Dushan Boroyevich,et al. Design considerations for GaN HEMT multichip halfbridge module for high-frequency power converters , 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.
[9] Gaudenzio Meneghesso,et al. Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs , 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).
[10] G. Verzellesi,et al. Trapping and high field related issues in GaN power HEMTs , 2014, 2014 IEEE International Electron Devices Meeting.
[11] K. Kosiel,et al. Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts , 2015 .
[12] Johan Driesen,et al. A Fast Voltage Clamp Circuit for the Accurate Measurement of the Dynamic ON-Resistance of Power Transistors , 2015, IEEE Transactions on Industrial Electronics.
[13] Sandeep R. Bahl,et al. Product-level reliability of GaN devices , 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).
[14] M. Meneghini,et al. High voltage trapping effects in GaN-based metal–insulator–semiconductor transistors , 2016 .
[15] Sameer Pendharkar,et al. Application reliability validation of GaN power devices , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).
[16] Eldad Bahat Treidel,et al. Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs , 2016, IEEE Transactions on Industry Applications.
[17] M. Meneghini,et al. Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs , 2017, IEEE Transactions on Electron Devices.
[18] Alex Q. Huang,et al. The 2018 GaN power electronics roadmap , 2018, Journal of Physics D: Applied Physics.
[19] C. Florian,et al. Dynamic RON Characterization Technique for the Evaluation of Thermal and Off-State Voltage Stress of GaN Switches , 2018, IEEE Transactions on Power Electronics.
[20] M. Uren,et al. The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs , 2020, IEEE Transactions on Electron Devices.