A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAMs

Abstract Resistive Random Access Memory (RRAM) is a form of nonvolatile storage that operates by changing the resistance of a specially formulated solid dielectric material [1] . Among RRAMs, oxide-based Resistive RAMs (so-called OxRRAMs) are promising candidates due their compatibility with CMOS processes and high ON/OFF resistance ratio. Common problems with OxRRAM are related to high variability in operating conditions and low yield. OxRRAM variability mainly impact ON/OFF resistance ratio. This ratio is a key parameter to determine the overall performance of an OxRRAM memory. In this context, the presented built-in structure allows collecting statistical data related to the OxRRAM memory array (ON/OFF resistance distributions) for reliability assessment of the technology.

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