Electrical Properties of Heavily Be-doped GaAs grown by Molecular Beam Epitaxy
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A. Beye | H. Shibata | A. Yamada | M. Tacano | Y. Makita | T. Matsumori | Y. Sugiyama | T. Takahashi | K. Mayer | N. Ohnishi | Y. Nakayama | M. Mori | K. Ishituka | Masahiko Mori