论文信息 - PROPERTIES OF PALLADIUM SILICIDE THIN FILMS OBTAINED BY VACUUM RAPID THERMAL ANNEALING OF R.F. SPUTTERED PD FILMS ON SI

PROPERTIES OF PALLADIUM SILICIDE THIN FILMS OBTAINED BY VACUUM RAPID THERMAL ANNEALING OF R.F. SPUTTERED PD FILMS ON SI

Abstract The possibility of obtaining palladium silicide layers by rapid thermal annealing (RTA) has been studied. Palladium layers of 300 and 1000 A thicknesses were deposited by r.f. sputtering on Si substrates. The samples were subjected to RTA at 800, 1000, 1200 and 1400°C for 15 s, 30 s, 1 min and 3 min in vacuum 5×10 −5 Torr. The deposited structure was studied by RHEED. The dependence of the structure and the sheet resistance of the Pd–Si films, as a function of the RTA condition, was established. The sample temperature in the RTA system could be increased from room temperature to the working temperature (800–1400°C) in 2 s. Pd 2 Si was formed after annealing at 1400°C even for short times of 15 s.

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