Superconducting flux flow transistor fabricated by an inductively coupled plasma etching technique

[1]  B. Han,et al.  High Density Plasma Etching of Y-Ba-Cu-O Superconductors , 2001 .

[2]  S. Pearton,et al.  A unified global self-consistent model of a capacitively and inductively coupled plasma etching system , 2000 .

[3]  S. T. Lee,et al.  Bias-assisted etching of polycrystalline diamond films in hydrogen, oxygen, and argon microwave plasmas , 1999 .

[4]  J. Contour,et al.  Current–voltage characterization of the vortex motion in YBa2Cu3O7−δ microbridges and the implications on the development of superconducting flux flow transistors , 1997 .

[5]  W. H. Mallison,et al.  High-temperature superconducting Josephson fluxon-antifluxon transistors , 1996 .

[6]  Robert F. Karlicek,et al.  Inductively coupled plasma etching of GaN , 1996 .

[7]  K. Miyahara,et al.  Characteristics of high-T/sub c/ superconducting flux flow transistors with submicron channels , 1995, IEEE Transactions on Applied Superconductivity.

[8]  Shugo Kubo,et al.  Transresistance and current gain of high‐Tc flux flow transistors , 1994 .

[9]  Sakai.  Theoretical study of electric-field effects in high-Tc oxide superconductors using an ultrathin-metal-insulator superlattice model. , 1993, Physical review. B, Condensed matter.

[10]  T. Hirano,et al.  Metal-Insulator-Superconductor Field-Effect-Transistor Using SrTiO3/YBa2Cu3Oy Heteroepitaxial Films , 1992 .

[11]  T. E. Zipperian,et al.  S-parameter measurements and microwave applications of superconducting flux flow transistors , 1991 .

[12]  D. Ginley,et al.  S parameter measurements on single superconducting thin-film three-terminal devices made of high-Tc and low-Tc materials , 1989 .

[13]  D. McGinnis,et al.  Single superconducting thin film devices for applications in high T/sub c/ materials circuits , 1989 .

[14]  Shugo Kubo,et al.  Vortex flow characteristics of high‐Tc flux flow transistors , 1994 .