论文信息 - Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation - 字舞流文

Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation

Frederick T. Chen | T. Wu | P. Tzeng | M. Tsai | Heng-Yuan Lee | Pang-Shiu Chen | Cha-Hsin Lin | Yu-Sheng Chen