论文信息 - Growth and surface analysis of SiO2 on 4H-SiC for MOS devices - 字舞流文

Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

C. B. Overton | Subba Ramaiah Kodigala | S. Chattopadhyay | D. Johnstone | Ira Ardoin | B. Gordon | D. Roy | D. Barone