Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing.

[1]  B. Svensson,et al.  On the estimation of depth resolution during sputter profiling , 1993 .

[2]  R. M. Cohen.  Point defects and diffusion in thin films of GaAs , 1997 .

[3]  Dennis G. Deppe,et al.  Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures , 1988 .

[4]  M. Otsubo,et al.  Characteristics of laser diodes with a partially intermixed GaAs-AlGaAs quantum well , 1995 .

[5]  M. Grove,et al.  Pulsed anodic oxides for III-V semiconductor device fabrication , 1994 .

[6]  John H. Marsh,et al.  Spatial control of quantum well intermixing in GaAs/AlGaAs using a one-step process , 1992 .

[7]  Siu Fung Yu,et al.  Semiconductor lasers using diffused quantum-well structures , 1998 .

[8]  Karl Hess,et al.  Disorder of an AlAs‐GaAs superlattice by impurity diffusion , 1981 .

[9]  Mohamed Henini,et al.  Zn diffusion-induced disorder in AlAs/GaAs superlattices , 1989 .

[10]  Hwang,et al.  Stimulated emission in semiconductor quantum wire heterostructures. , 1989, Physical review letters.

[11]  Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate , 1996 .

[12]  InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer , 1996, Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.

[13]  M. Maier,et al.  Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells , 1995 .

[14]  Chennupati Jagadish,et al.  Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells , 1998 .

[15]  J. Marsh.  Quantum well intermixing , 1993 .

[16]  Weiss,et al.  Effect of interdiffusion on the subbands in an AlxGa1-xAs/GaAs single-quantum-well structure. , 1992, Physical Review B (Condensed Matter).

[17]  Chennupati Jagadish,et al.  Large energy shifts in GaAs‐AlGaAs quantum wells by proton irradiation‐induced intermixing , 1996 .

[18]  Jin Zou,et al.  Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing , 1997 .