Piezoelectric coefficients and spontaneous polarization of ScAlN
暂无分享,去创建一个
Siyuan Zhang | Tomi Laurila | Olga Lopez-Acevedo | Markku Ylilammi | T. Laurila | O. Lopez-Acevedo | M. Caro | T. Riekkinen | J. Molarius | M. Ylilammi | Siyuan Zhang | M. Moram | Miguel A Caro | Tommi Riekkinen | Michelle A Moram | Jyrki Molarius | M. A. Caro
[1] Maher Moakher,et al. The Closest Elastic Tensor of Arbitrary Symmetry to an Elasticity Tensor of Lower Symmetry , 2006, cond-mat/0608311.
[2] Paul Muralt,et al. Piezoelectric Al1−xScxN thin films: A semiconductor compatible solution for mechanical energy harvesting and sensors , 2013 .
[3] W. Kohn,et al. Self-Consistent Equations Including Exchange and Correlation Effects , 1965 .
[4] G. Wingqvist,et al. Origin of the anomalous piezoelectric response in wurtzite Sc(x)Al(1-x)N alloys. , 2010, Physical review letters.
[5] Yan Zhang,et al. Dislocation reduction in gallium nitride films using scandium nitride interlayers , 2007 .
[6] E. O’Reilly,et al. Comparison of stress and total energy methods for calculation of elastic properties of semiconductors , 2013, Journal of physics. Condensed matter : an Institute of Physics journal.
[7] Ferreira,et al. Electronic properties of random alloys: Special quasirandom structures. , 1990, Physical review. B, Condensed matter.
[8] G. Scuseria,et al. Hybrid functionals based on a screened Coulomb potential , 2003 .
[9] Paul Muralt,et al. Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films , 2012 .
[10] Vincenzo Fiorentini,et al. Nonlinear macroscopic polarization in III-V nitride alloys , 2001 .
[11] Paul Muralt,et al. Measurement of the effective transverse piezoelectric coefficient e31,f of AlN and Pb(Zrx,Ti1−x)O3 thin films , 1999 .
[12] C. Humphreys,et al. Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy , 2009, Journal of Applied Physics.
[13] David Vanderbilt,et al. Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997 .
[14] M. Akiyama,et al. Piezoelectric properties of ScAlN thin films for piezo-MEMS devices , 2013, 2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS).
[15] M. Craford,et al. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting , 2007, Journal of Display Technology.
[16] P. Dobson,et al. Physical Properties of Crystals – Their Representation by Tensors and Matrices , 1985 .
[17] K. Burke,et al. Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)] , 1997 .
[18] E. O’Reilly,et al. Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides , 2012 .
[19] B. Terreault,et al. An accurate and sensitive method for the determination of the depth distribution of light elements in heavy materials , 1976 .
[20] Discussion, Summary, and Conclusions , 2016 .
[21] G. Kresse,et al. From ultrasoft pseudopotentials to the projector augmented-wave method , 1999 .
[22] A. Teshigahara,et al. Preparation of scandium aluminum nitride thin films by using scandium aluminum alloy sputtering target and design of experiments , 2010 .
[23] J. Paier,et al. Screened hybrid density functionals applied to solids. , 2006, The Journal of chemical physics.
[24] M. Ángel,et al. Theory of elasticity and electric polarization effects in the group-III nitrides , 2013 .
[25] P. Hohenberg,et al. Inhomogeneous electron gas , 1964 .
[26] Burke,et al. Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.
[27] Eoin P. O'Reilly,et al. Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides , 2013, 1309.3309.
[28] R. French,et al. Vibrational Spectroscopy of Aluminum Nitride , 1993 .
[29] M. Scheffler,et al. Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN , 2009 .
[30] D. Chadi,et al. Special points for Brillouin-zone integrations , 1977 .
[31] U. Schmid,et al. Circular test structure for the determination of piezoelectric constants of ScxAl1−xN thin films applying Laser Doppler Vibrometry and FEM simulations☆ , 2015, Sensors and actuators. A, Physical.
[32] J. Keinonen,et al. Comparison of TOF-ERDA and nuclear resonance reaction techniques for range profile measurements of keV energy implants , 1996 .
[33] David Vanderbilt. Berry-phase theory of proper piezoelectric response , 1999 .
[34] Wai Yuen Fu,et al. Elastic constants and critical thicknesses of ScGaN and ScAlN , 2013 .
[35] Igor A. Abrikosov,et al. Ab initio elastic tensor of cubic Ti 0.5 Al 0.5 N alloys: Dependence of elastic constants on size and shape of the supercell model and their convergence , 2012 .
[36] Oliver Ambacher,et al. Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures , 2002 .
[37] F. Bernardini,et al. Accurate calculation of polarization-related quantities in semiconductors , 2001 .
[38] Kresse,et al. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. , 1996, Physical review. B, Condensed matter.
[39] E. Schubert. Solid-State Lighting , 2004 .
[40] David Vanderbilt,et al. Theory of Polarization: A Modern Approach , 2007 .
[41] A. Teshigahara,et al. Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films , 2009 .
[42] S. Dijken,et al. Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators , 2009 .
[43] Nobuaki Kawahara,et al. Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering , 2009, Advanced materials.
[44] K. Mizohata. Progress in Elastic Recoil Detection Analysis , 2012 .
[45] C. Humphreys. Solid-State Lighting , 2008 .
[46] D. Vanderbilt,et al. Electric polarization as a bulk quantity and its relation to surface charge. , 1993, Physical review. B, Condensed matter.
[47] Jerry R. Meyer,et al. Band parameters for III–V compound semiconductors and their alloys , 2001 .
[48] J. Nye. Physical Properties of Crystals: Their Representation by Tensors and Matrices , 1957 .
[49] D. Vanderbilt,et al. Theory of polarization of crystalline solids. , 1993, Physical review. B, Condensed matter.
[50] Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides , 2013, 1303.3745.
[51] Steven Mahon,et al. Bulk Acoustic Wave Devices - Why, How, and Where They are Going , 2007 .
[52] M. Dubois. Measurements of the effective transe piezoelectric coefficient e_ of AlN and Pb(Zr_x,Ti_ )O_3 thin films , 1999 .
[53] Peter E. Bl. Projector-Augmented Wave Method: An introduction , 2003 .
[54] Raffaele Resta,et al. MACROSCOPIC POLARIZATION IN CRYSTALLINE DIELECTRICS : THE GEOMETRIC PHASE APPROACH , 1994 .
[55] Siyuan Zhang,et al. ScGaN and ScAlN: emerging nitride materials , 2014 .
[56] Jean-Marc Triscone,et al. Physics of ferroelectrics : a modern perspective , 2007 .