A 1.5 V, 1.5 GHz CMOS low noise amplifier

A 1.5 GHz low noise amplifier for a Global Positioning System (GPS) receiver has been implemented in a 0.6 /spl mu/m CMOS process. This amplifier provides a forward gain of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply. To the authors' knowledge, this represents the lowest noise figure reported to date for a CMOS amplifier operating above 1 GHz.

[1]  H. A. Haus,et al.  Representation of Noise in Linear Twoports , 1960, Proceedings of the IRE.

[2]  A. Ziel.  Gate noise in field effect transistors at moderately high frequencies , 1963 .

[3]  A. van der Ziel,et al.  Noise in solid-state devices and lasers , 1970 .

[4]  Norman G. Einspruch,et al.  Vlsi Electronics: Microstructure Science , 1982 .

[5]  R.P. Jindal.  Noise associated with distributed resistance of MOSFET gate structures in integrated circuits , 1984, IEEE Transactions on Electron Devices.

[6]  A.A. Abidi,et al.  High-frequency noise measurements on FET's with small dimensions , 1986, IEEE Transactions on Electron Devices.

[7]  A. Ziel.  Noise in solid state devices and circuits , 1986 .

[8]  R. Jindal.  Hot-electron effects on channel thermal noise in fine-line NMOS field-effect transistors , 1986, IEEE Transactions on Electron Devices.

[9]  Y. Imai,et al.  Design and performance of low-current GaAs MMICs for L-band front-end applications , 1991 .

[10]  K. R. Cioffi.  Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions , 1992, IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.

[11]  R. Benton,et al.  GaAs MMICs for an integrated GPS front-end , 1992, GaAs IC Symposium Technical Digest 1992.

[12]  A. Abidi,et al.  Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier , 1993, IEEE Electron Device Letters.

[13]  Ping Wang.  Wide band noise in MOSFETs , 1993 .

[14]  C. Kermarrec,et al.  Ultra low power low noise amplifiers for wireless communications , 1993, 15th Annual GaAs IC Symposium.

[15]  H. Williams,et al.  Analytical and experimental studies of thermal noise in MOSFET's , 1994 .

[16]  K. F. Lee,et al.  Impact of distributed gate resistance on the performance of MOS devices , 1994 .

[17]  Bing Wang,et al.  MOSFET thermal noise modeling for analog integrated circuits , 1994 .

[18]  K.W. Kobayashi,et al.  A low-noise baseband 5-GHz direct-coupled HBT amplifier with common-base active input match , 1994, IEEE Microwave and Guided Wave Letters.

[19]  Robert G. Meyer,et al.  A 1-GHz BiCMOS RF front-end IC , 1994, IEEE J. Solid State Circuits.

[20]  Yo Yamaguchi,et al.  An L-band ultra-low-power-consumption monolithic low-noise amplifier , 1995 .

[21]  Asad A. Abidi,et al.  A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver , 1996, IEEE J. Solid State Circuits.

[22]  S. Moinian,et al.  High Q inductors for wireless applications in a complementary silicon bipolar process , 1996 .

[23]  R. Brodersen,et al.  A low-power CMOS chipset for spread spectrum communications , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.