Effect of surface texturization of In2S3 window layer in Cu2O/In2S3 solar cells

A thin layer of p-type Cu₂O was grown over flexible 30 μm thick copper substrates. Using Injection Chemical Vapor Deposition technique, n-type In₂S₃ thin films was grown over the Cu₂O layer. A p-n junction was thus realized. The Cu₂O/In₂S₃ hetero-structure showed photovoltaic behavior. A solar cell with the structure Cu/Cu₂O/In₂S₃ /Ag could be fabricated. An acidic texturization sequence was developed which increased the photo-sensitivity of the In₂S₃ window layer. The Cu/Cu₂O/In₂S₃ /Ag hetero-structure with the textured window layer had an open circuit voltage of 377 mV, short circuit current density of 0.118 mA/cm² and fill factor of 33.34 %.