Spontaneous alloy composition ordering in GaAs-AlGaAs core-shell nanowires.
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Lucas Schweickert | Gerhard Abstreiter | Daniel Rudolph | Max Bichler | Stefan Funk | Markus Döblinger | G. Abstreiter | M. Döblinger | M. Bichler | I. Zardo | S. Hertenberger | S. Funk | G. Koblmüller | L. Schweickert | J. Finley | D. Rudolph | Jonathan J Finley | Gregor Koblmüller | Stefanie Morkötter | Sonja Matich | J. Becker | S. Morkötter | D. Spirkoska | Simon Hertenberger | Ilaria Zardo | Jonathan Becker | Danĉe Spirkoska | S. Matich
[1] F. Himpsel,et al. The oxidation of GaAs(110): A reevaluation , 1984 .
[2] H. Okamoto,et al. Si and Sn Doping in AlxGa1-xAs Grown by MBE , 1982 .
[3] G. Abstreiter,et al. Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires. , 2008, Small.
[4] L. Samuelson,et al. Phase segregation in AlInP shells on GaAs nanowires. , 2006, Nano letters.
[5] H. Cummins,et al. Light scattering in solids , 1979 .
[6] Joachim P. Spatz,et al. X-ray photoelectron spectroscopy study on gold nanoparticles supported on diamond , 2002 .
[7] A. Gossard,et al. Alloy Clustering inGa1−xAlxAsCompound Semiconductors Grown by Molecular Beam Epitaxy , 1982 .
[8] Yong Ding,et al. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. , 2008, Nature materials.
[9] Lars Samuelson,et al. Semiconductor nanowires for 0D and 1D physics and applications , 2004 .
[10] B. Deveaud,et al. Optical determination of the AlxGa1−xAs energy gap variation versus the Al concentration in MBE-grown samples , 1987 .
[11] G. Abstreiter,et al. Free standing modulation doped core–shell GaAs/AlGaAs hetero‐nanowires , 2011 .
[12] Lyubov V. Titova,et al. Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires , 2006 .
[13] Fred H. Pollak,et al. Raman scattering in alloy semiconductors: Spatial correlation model , 1984 .
[14] Matthias Scheffler,et al. Novel Diffusion Mechanism on the GaAs(001) Surface: The Role of Adatom-Dimer Interaction , 1997 .
[15] J. Morante,et al. Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires , 2009 .
[16] Takashi Fukui,et al. Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy , 2005 .
[17] S. Houde-Walter,et al. Dependence of Al‐Ga interdiffusion in AlGaAs on stoichiometry between Ga‐rich and As‐rich solidus limits , 1992 .
[18] Logan,et al. Direct-energy-gap dependence on Al concentration in AlxGa , 1988, Physical review. B, Condensed matter.
[19] G. Abstreiter,et al. Direct observation of a noncatalytic growth regime for GaAs nanowires. , 2011, Nano letters.
[20] Charles M. Lieber,et al. Epitaxial core–shell and core–multishell nanowire heterostructures , 2002, Nature.
[21] Gerhard Abstreiter,et al. Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs , 1978 .
[22] T. Fukui,et al. A III–V nanowire channel on silicon for high-performance vertical transistors , 2012, Nature.
[23] Charles M. Lieber,et al. Ge/Si nanowire heterostructures as high-performance field-effect transistors , 2006, Nature.
[24] N. Sawaki,et al. Structural and optical properties of a catalyst-free GaAs/AlGaAs core–shell nano/microwire grown on (1 1 1)Si substrate , 2010 .
[25] I. Lindau,et al. Unified defect model and beyond , 1980 .
[26] L. Samuelson,et al. Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires , 2010 .
[27] E. Kapon,et al. Mechanisms of Self-Ordering in Nonplanar Epitaxy of Semiconductor Nanostructures , 2002 .
[28] L. Allard,et al. Realization of defect-free epitaxial core-shell GaAs/AlGaAs nanowire heterostructures , 2008 .
[29] Gerhard Abstreiter,et al. Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy , 2008 .
[30] H. Rubinsztein-Dunlop,et al. Effect of conducting polymer molecular weight on nanocrystal growth size for photovoltaic applications , 2006, 2006 International Conference on Nanoscience and Nanotechnology.
[31] M. Bichler,et al. Nanometer-scale sharpness in corner-overgrown heterostructures , 2008, 0803.3986.
[32] Y. Kajikawa,et al. Effects of the MBE growth temperature on Si-doped AlxGa1-xAs (x=0, 0.26) and HEMT , 1992 .
[33] Charles M. Lieber,et al. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. , 2006, Nano letters.
[34] H. Sakaki,et al. Control of ridge shape for the formation of nanometer-scale GaAs ridge quantum wires by molecular beam epitaxy , 1995 .
[35] Hitoshi Tanaka,et al. Donor‐cation vacancy complex in Si‐doped AlGaAs grown by metalorganic chemical vapor deposition , 1987 .
[36] Lorenzo Pavesi,et al. Photoluminescence of AlxGa1−xAs alloys , 1994 .
[37] Patricia M. Mooney,et al. Deep donor levels (DX centers) in III‐V semiconductors , 1990 .
[38] T. Tanaka,et al. III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications , 2011, IEEE Journal of Selected Topics in Quantum Electronics.
[39] Martin Heiss,et al. Impact of surfaces on the optical properties of GaAs nanowires , 2010 .
[40] J. Harmand,et al. Wurtzite GaAs/AlGaAs core–shell nanowires grown by molecular beam epitaxy , 2009, Nanotechnology.
[41] M. Bichler,et al. Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy , 2010 .
[42] G. Abstreiter,et al. Crystal structure transfer in core/shell nanowires. , 2011, Nano letters.
[43] Ningfeng Huang,et al. Electrical and optical characterization of surface passivation in GaAs nanowires. , 2012, Nano letters.