Dependence on doping type (p/n) of the water vapor oxidation of high‐gap AlxGa1−xAs
暂无分享,去创建一个
Fred A. Kish | K. C. Hsieh | Nick Holonyak | N. Holonyak | J. Dallesasse | K. Hsieh | F. Kish | S. Maranowski | S. Caracci | S. J. Caracci | John Dallesasse | G. Höfler | G. E. Höfler | Steven A Maranowski
[1] A. R. Sugg,et al. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices , 1990 .
[2] N. Cabrera,et al. Theory of the oxidation of metals , 1949 .
[3] Dennis G. Deppe,et al. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures , 1988 .
[4] W. Shockley,et al. Solubility of Flaws in Heavily-Doped Semiconductors , 1960 .
[5] Fred A. Kish,et al. Native oxide stabilization of AlAs‐GaAs heterostructures , 1991 .
[6] U. R. Evans,et al. The corrosion and oxidation of metals , 1976 .
[7] N. El-Zein,et al. Native‐oxide masked impurity‐induced layer disordering of AlxGa1−xAs quantum well heterostructures , 1991 .
[8] N. El-Zein,et al. Native-oxide-masked Si impurity-induced layer disordering of AlxGa1−xAs-AlyGa1−yAs-AlzGa1−zAs quantum-well heterostructures , 1991 .
[9] N. Holonyak,et al. Planar native‐oxide index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers , 1991 .
[10] O. Kubaschewski,et al. Oxidation of metals and alloys , 1953 .
[11] A. R. Sugg,et al. Native-oxide coupled-cavity Al(x)Ga(1-x)As-GaAs quantum well heterostructure laser diodes , 1991 .
[12] M. Ludowise. Metalorganic chemical vapor deposition of III‐V semiconductors , 1985 .
[13] N. Holonyak,et al. Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers , 1991 .
[14] F. A. Kish,et al. Low‐threshold disorder‐defined native‐oxide delineated buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers , 1991 .
[15] Z. Lu,et al. Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p‐type GaAs , 1991 .