Dependence on doping type (p/n) of the water vapor oxidation of high‐gap AlxGa1−xAs

The oxidation (H2O vapor+N2 carrier gas, 425–525 °C) of high‐gap AlxGa1−xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect significantly the oxidation rate, with p‐type samples oxidizing more rapidly than n‐type samples. Classical oxidation theory is employed to explain these phenomena which are related to the position of the Fermi level in the samples.

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