论文信息 - InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $f_{\tau}/f_{\max} \sim \hbox{430/800}\ \hbox{GHz}$ - 字舞流文

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $f_{\tau}/f_{\max} \sim \hbox{430/800}\ \hbox{GHz}$

J. Fastenau | W. K. Liu | M. Urteaga | M. Rodwell | A. Baraskar | B. Thibeault | E. Lobisser | V. Jain | Z. Griffith | D. Loubychev | A. Snyder | Y. Wu