论文信息 - Role of two‐photon absorption in ultrafast semiconductor optical switching devices

Role of two‐photon absorption in ultrafast semiconductor optical switching devices

We report measurements of the two‐photon absorption coefficient of GaAs optical waveguide structures at 1.06 μm. We show that for pulse lengths longer than ∼1 ps, light‐induced index changes sufficient to induce all‐optical switching will be predominantly due to carriers generated by two‐photon absorption. These results allow us to predict limitations for ultrafast all‐optical GaAs devices.

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