III–Nitride UV Devices

The need for efficient, compact and robust solid-state UV optical sources and sensors had stimulated the development of optical devices based on III–nitride material system. Rapid progress in material growth, device fabrication and packaging enabled demonstration of high efficiency visible-blind and solar-blind photodetectors, deep-UV light-emitting diodes with emission from 400 to 250 nm, and UV laser diodes with operation wavelengths ranging from 340 to 350 nm. Applications of these UV optical devices include flame sensing; fluorescence-based biochemical sensing; covert communications; air, water and food purification and disinfection; and biomedical instrumentation. This paper provides a review of recent advances in the development of UV optical devices. Performance of state-of-the-art devices as well as future prospects and challenges are discussed.

[1]  Katsushi Akita,et al.  Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes , 2004 .

[2]  Michael S. Shur,et al.  AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA , 2004 .

[3]  Mim Lal Nakarmi,et al.  AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers , 2004 .

[4]  M. Asif Khan,et al.  Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm , 2004 .

[5]  M. Asif Khan,et al.  250nmAlGaN light-emitting diodes , 2004 .

[6]  Grigory Simin,et al.  High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design , 2004 .

[7]  Koji Ishibashi,et al.  High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates , 2004 .

[8]  Takashi Mukai,et al.  Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes , 2004 .

[9]  Yoon-Kyu Song,et al.  Ultraviolet light-emitting diodes operating in the 340nm wavelength range and application to time-resolved fluorescence spectroscopy , 2004 .

[10]  M. Asif Khan,et al.  Micro-pixel Design Milliwatt Power 254 nm Emission Light Emitting Diodes , 2004 .

[11]  Metal–Semiconductor–Metal AlN Mid-Ultraviolet Photodetectors Grown by Magnetron Reactive Sputtering Deposition , 2004 .

[12]  M. Asif Khan,et al.  High-efficiency 269 nm emission deep ultraviolet light-emitting diodes , 2004 .

[13]  Takashi Jimbo,et al.  Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure , 2004 .

[14]  G. A. Slack,et al.  Near-bandedge cathodoluminescence of an AlN homoepitaxial film , 2004 .

[15]  A. Nurmikko,et al.  Optically pumped ultraviolet AlGaInN quantum well laser at 340 nm wavelength , 2004 .

[16]  Manijeh Razeghi,et al.  4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes , 2003 .

[17]  Y. Kawaguchi,et al.  Low-dislocation density AlGaN layer by air-bridged lateral epitaxial growth , 2003 .

[18]  H. Temkin,et al.  Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)N , 2003 .

[19]  Michael Kneissl,et al.  Ultraviolet InAlGaN multiple‐quantum‐well laser diodes , 2003 .

[20]  Takashi Mukai,et al.  365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy , 2003 .

[21]  Electrical properties of p–n junctions based on superlattices of AlN/AlGa(In)N , 2003 .

[22]  Shuji Nakamura,et al.  292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base , 2003 .

[23]  Takashi Mukai,et al.  High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors , 2002 .

[24]  Michael S. Shur,et al.  Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN , 2002 .

[25]  Michael S. Shur,et al.  AlGaN single-quantum-well light-emitting diodes with emission at 285 nm , 2002 .

[26]  Grigory Simin,et al.  Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm , 2002 .

[27]  M. Shur,et al.  Near-band-edge photoluminescence of wurtzite-type AlN , 2002 .

[28]  Grigory Simin,et al.  Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates , 2002 .

[29]  Tao Wang,et al.  High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer , 2002 .

[30]  Joe C. Campbell,et al.  Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode , 2002 .

[31]  Masao Ikeda,et al.  High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio , 2002 .

[32]  Hong Wang,et al.  Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management , 2002 .

[33]  Takashi Mukai,et al.  Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip , 2002 .

[34]  Atsuhiro Kinoshita,et al.  Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect , 2002 .

[35]  M. Shur,et al.  Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells , 2001 .

[36]  M. Shur,et al.  Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells , 2001 .

[37]  Theeradetch Detchprohm,et al.  Demonstration of Flame Detection in Room Light Background by Solar‐Blind AlGaN PIN Photodiode , 2001 .

[38]  Joe C. Campbell,et al.  High quantum efficiency AlGaN/GaN solar-blind photodetectors grown by metalorganic chemical vapor deposition , 2001 .

[39]  Michael S. Shur,et al.  Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors , 2001 .

[40]  Takashi Mukai,et al.  Characteristics of Ultraviolet Laser Diodes Composed of Quaternary AlxInyGa(1-x-y)N , 2001 .

[41]  Tsunemasa Taguchi,et al.  High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy , 2001 .

[42]  M. Shur,et al.  Band-edge luminescence in quaternary AlInGaN light-emitting diodes , 2001 .

[43]  Jung Han,et al.  Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers , 2001 .

[44]  A. Lunev,et al.  High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells , 2000 .

[45]  K. A. Mcintosh,et al.  Ultraviolet photon counting with GaN avalanche photodiodes , 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).

[46]  Michael S. Shur,et al.  Accumulation Hole Layer in p-GaN/AlGaN Heterostructures , 2000 .

[47]  Ayumu Tsujimura,et al.  Improvement of Crystalline Quality in GaN Films by Air-Bridged Lateral Epitaxial Growth , 2000 .

[48]  Joe C. Campbell,et al.  GaN avalanche photodiodes , 2000 .

[49]  Adam W. Saxler,et al.  Polarization-enhanced Mg doping of AlGaN/GaN superlattices , 1999 .

[50]  M. Crawford,et al.  Metal-Organic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN , 1999 .

[51]  Joe C. Campbell,et al.  Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN , 1998 .

[52]  Yoon-Kyu Song,et al.  AlGaN/GaN quantum well ultraviolet light emitting diodes , 1998 .

[53]  Henryk Temkin,et al.  Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction , 1998 .

[54]  Low dark current pin ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition , 1998 .

[55]  Joe C. Campbell,et al.  High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers , 1997 .

[56]  Z. Feng,et al.  Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga0.95Al0.05N , 1997 .

[57]  8×8 GaN Schottky barrier photodiode array for visible-blind imaging , 1997 .

[58]  Shuji Nakamura,et al.  InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates , 1996 .

[59]  H. Amano,et al.  Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device , 1995 .

[60]  Yasuharu Suematsu,et al.  Violet and Near-UV Light Emission from GaN/Al$_{\bf 0.08}$Ga$_{\bf 0.92}$N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy , 1995 .

[61]  M. Asif Khan,et al.  Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates , 1992 .

[62]  M. Asif Khan,et al.  High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers , 1992 .

[63]  M. Asif Khan,et al.  Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition , 1992 .