Improved Characterization Methology for MOSFETs up to 220 GHz

Measurement and modeling procedures to accurately extract a small-signal equivalent circuit of advanced MOSFETs up to 220 GHz are proposed. The methodology carried out goes from the vector network analyzer calibration to the simulation results using complex deembedding. Good comparisons between the measurement and the simulation data obtained using this procedure are shown up to 220 GHz.

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