A high precision SOI MEMS–CMOS ±4g piezoresistive accelerometer

Abstract System development and characterization of a low noise low offset SOI MEMS–CMOS PCB-integrated multi-chip ±4g piezoresistive accelerometer sensor comprising a coupled multi-bandwidth variable-gain amplifier block and a thermal sensitivity and offset compensation block is presented in this work. Custom design and fabrication has been carried out for both the SOI MEMS sensor and the analog front-end for high precision and operational reliability. The system is shown to have a scale factor of ∼4 mV/g and an output nonlinearity

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