TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.

[1]  Johann M. Heuser,et al.  A Silicon Vertex Tracker upgrade for the PHENIX experiment at RHIC , 2005 .

[2]  Yiyu Shi,et al.  Novel Spare TSV Deployment for 3-D ICs Considering Yield and Timing Constraints , 2015, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[3]  Koji Yamada,et al.  Broadband and polarization-independent efficient vertical optical coupling with Si integrated 45 degree mirror , 2015, 2015 IEEE Optical Interconnects Conference (OI).

[4]  Gennady I. Zebrev,et al.  Compact Modeling and Simulation of Heavy Ion-Induced Soft Error Rate in Space Environment: Principles and Validation , 2017, IEEE Transactions on Nuclear Science.

[5]  Wenqi Zhang,et al.  Fine pitch Cu/Sn solid state diffusion bonding for advanced three-dimensional chip stacking , 2015 .

[6]  K. A. LaBel,et al.  Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs , 2011, IEEE Transactions on Nuclear Science.

[7]  R. Reed,et al.  Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates , 2000 .

[8]  Jiawen Xia,et al.  Two-plane painting injection scheme for BRing of HIAF , 2017 .

[9]  D. Krämer.  BASELINE DESIGN FOR THE FACILITY FOR ANTIPROTON AND ION RESEACH (FAIR) FINALIZED , 2006 .

[10]  Kenneth F. Galloway,et al.  Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence , 2017, IEEE Transactions on Nuclear Science.

[11]  Joungho Kim,et al.  Modeling and Analysis of TSV Noise Coupling Effects on RF LC-VCO and Shielding Structures in 3D IC , 2018, IEEE Transactions on Electromagnetic Compatibility.

[12]  Lloyd W. Massengill,et al.  Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology , 2017, IEEE Transactions on Nuclear Science.

[13]  N. Launay,et al.  Full integration of a 3D demonstrator with TSV first interposer, ultra thin die stacking and wafer level packaging , 2013, 2013 IEEE 63rd Electronic Components and Technology Conference.

[14]  Jung-Lok Yu,et al.  Zinc and Tin-Zinc Via-Filling for the Formation of Through-Silicon Vias in a System-in-Package , 2009 .

[15]  R. Harboe-Sørensen,et al.  Upgrades for the RADEF Facility , 2007, 2007 IEEE Radiation Effects Data Workshop.

[16]  H. Miura,et al.  Minimization of the Local Residual Stress in 3D Flip Chip Structures by Optimizing the Mechanical Properties of Electroplated Materials and the Alignment Structure of TSVs and Fine Bumps , 2012 .

[17]  Ying-Hao Kuo,et al.  A Hybrid Silicon–AlGaInAs Phase Modulator , 2008, IEEE Photonics Technology Letters.

[18]  S. Kuboyama,et al.  Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons , 2007, IEEE Transactions on Nuclear Science.

[19]  T. D. Loveless,et al.  A Single-Event-Hardened Phase-Locked Loop Fabricated in 130 nm CMOS , 2007, IEEE Transactions on Nuclear Science.

[20]  Ari Virtanen,et al.  Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions , 2016, IEEE Transactions on Nuclear Science.

[21]  G. Beyer,et al.  Interposer technology for high band width interconnect applications , 2013, 2013 IEEE 63rd Electronic Components and Technology Conference.

[22]  Tao-Chih Chang,et al.  Thermal-gradient induced abnormal Ni3Sn4 interfacial growth at cold side in Sn2.5Ag alloys for three-dimensional integrated circuits , 2013 .

[23]  Takeshi Tanaka,et al.  Design study of the injection and extraction systems for the RIKEN superconducting ring cyclotron , 1998, 1998 IEEE International Integrated Reliability Workshop Final Report (Cat. No.98TH8363).

[24]  Yu-Lin Shen,et al.  Analysis of misalignment-induced deformation in three-dimensional semiconductor chip stacks , 2014 .

[25]  Chongshen Song,et al.  A Scalable Network-on-Chip Microprocessor With 2.5D Integrated Memory and Accelerator , 2017, IEEE Transactions on Circuits and Systems I: Regular Papers.

[26]  Xingji Li,et al.  Simultaneous and Sequential Radiation Effects on NPN Transistors Induced by Protons and Electrons , 2012, IEEE Transactions on Nuclear Science.

[27]  Lei Zhang,et al.  Economizing TSV Resources in 3-D Network-on-Chip Design , 2015, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[28]  L. E. Seixas,et al.  Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator , 2014 .

[29]  Albert T. Wu,et al.  Preferred orientation relationships with large misfit interfaces between Ni3Sn4 and Ni in reactive wetting of eutectic SnPb on Ni , 2011 .

[30]  Olivier Musseau.  Effets des ions lourds energetiques sur les circuits integres : application au cas de circuits mos, mos sur isolants et gaas , 1991 .

[31]  Harold Barnard,et al.  Joule heating induced thermomigration failure in un-powered microbumps due to thermal crosstalk in 2.5D IC technology , 2016 .

[32]  Hiroshi Yano,et al.  Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions , 2017 .

[33]  Wenchao Tian and Haoyue Ji.  Recent Research of Electromagnetic Characteristics in Wire Bonding , 2016 .

[34]  Takayuki Ohba,et al.  Formation of TSV for the stacking of advanced logic devices utilizing bumpless wafer-on-wafer technology , 2012 .

[35]  Yufeng Jin,et al.  Electrical characterization of cylindrical and annular TSV for combined application thereof , 2011, 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging.

[36]  Jian-lin Liu,et al.  Effects of Sn thickness on morphology and evolution of Ni3Sn4 grains formed between molten Sn and Ni substrate , 2015 .

[37]  Minkyu Je,et al.  Design of an On-Silicon-Interposer Passive Equalizer for Next Generation High Bandwidth Memory With Data Rate Up To 8 Gb/s , 2018, IEEE Transactions on Circuits and Systems I: Regular Papers.

[38]  Philip G. Emma,et al.  Is 3D chip technology the next growth engine for performance improvement? , 2008, IBM J. Res. Dev..

[39]  Krishnendu Chakrabarty,et al.  Post-bond Testing of the Silicon Interposer and Micro-bumps in 2.5D ICs , 2013, 2013 22nd Asian Test Symposium.

[40]  Xingji Li,et al.  Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy , 2015, IEEE Transactions on Nuclear Science.

[41]  Yinshui Xia,et al.  Electrical–Thermal Characterization of Through Packaging Vias in Glass Interposer , 2017, IEEE Transactions on Nanotechnology.

[42]  Kenneth F. Galloway,et al.  Heavy-Ion-Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence , 2017, IEEE Transactions on Nuclear Science.

[43]  P. Spiller.  FAIR AT GSI , 2007 .

[44]  Makoto Asai,et al.  A Roadmap For Geant4 , 2012 .

[45]  John D. Cressler,et al.  Radiation Effects in SiGe Technology , 2013, IEEE Transactions on Nuclear Science.

[46]  James H. Adams,et al.  Cosmic Ray Effects on Microelectronics , 1982, IEEE Transactions on Nuclear Science.

[47]  Xiaoli Ren,et al.  High frequency characterization and analysis of through silicon vias and coplanar waveguides for silicon interposer , 2016 .

[48]  Ziyang Zhang,et al.  Multicore Polymer Waveguides and Multistep 45° Mirrors for 3D Photonic Integration , 2014, IEEE Photonics Technology Letters.

[49]  Erik Jan Marinissen,et al.  Low-Cost Post-Bond Testing of 3-D ICs Containing a Passive Silicon Interposer Base , 2014, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[50]  Yufeng Jin,et al.  Fabrication and Characterization of Annular Copper Through-Silicon via for Passive Interposer Applications , 2018, IEEE Transactions on Semiconductor Manufacturing.

[51]  F. Che,et al.  Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication , 2012, Journal of Electronic Materials.

[52]  D. F. Williams,et al.  De-embedding coplanar probes with planar distributed standards , 1988 .

[53]  Laurent Garnier.  Geant4 application in a Web browser , 2014 .

[54]  Jong-In Ryu,et al.  High density and low-cost silicon interposer using thin-film and organic lamination processes , 2012, 2012 IEEE 62nd Electronic Components and Technology Conference.

[55]  J. L. Titus,et al.  An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs , 2013, IEEE Transactions on Nuclear Science.

[56]  Kenneth A. LaBel,et al.  Schottky Diode Derating for Survivability in a Heavy Ion Environment , 2015, IEEE Transactions on Nuclear Science.

[57]  Yu-Ping Su,et al.  Electromigration induced failure on lead-free micro bumps in three-dimensional integrated circuits packaging , 2012 .

[58]  S. Wang,et al.  EBSD Investigation of Cu-Sn IMC Microstructural Evolution in Cu/Sn-Ag/Cu Microbumps During Isothermal Annealing , 2013, Journal of Electronic Materials.

[59]  Pedram Mousavi,et al.  Development of Embedded Redistribution Layer-Based Silicon Interposer for 3-D Integration , 2018, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[60]  Bao,et al.  Annual Report of HI-13 Tandem Accelerator in 2012 , 2012 .

[61]  A. Ferrari,et al.  Event generators for simulating heavy ion interactions to evaluate the radiation risks in spaceflight , 2005, 2005 IEEE Aerospace Conference.

[62]  Anthony Collins,et al.  A Heterogeneous 3D-IC Consisting of Two 28 nm FPGA Die and 32 Reconfigurable High-Performance Data Converters , 2014, IEEE Journal of Solid-State Circuits.

[63]  Kuan-Neng Chen,et al.  Materials challenges in three-dimensional integrated circuits , 2015 .

[64]  Kenneth F. Galloway,et al.  Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes , 2016, IEEE Transactions on Device and Materials Reliability.

[65]  Muhannad S. Bakir,et al.  Fabrication and Characterization of Electrical Interconnects and Microfluidic Cooling for 3D ICS With Silicon Interposer , 2016 .

[66]  L.F. Tiemeijer,et al.  A New 12-Term Open–Short–Load De-Embedding Method for Accurate On-Wafer Characterization of RF MOSFET Structures , 2010, IEEE Transactions on Microwave Theory and Techniques.

[67]  Wenchao Tian,et al.  A Review on Lattice Defects in Graphene: Types, Generation, Effects and Regulation , 2017, Micromachines.

[68]  Fengjuan Wang,et al.  Analytical models for the thermal strain and stress induced by annular through-silicon-via (TSV) , 2013, IEICE Electron. Express.

[69]  Y.-L. Shen,et al.  Misalignment induced shear deformation in 3D chip stacking: A parametric numerical assessment , 2013, Microelectron. Reliab..

[70]  Eiichi Mizuta,et al.  Investigation of single-event damages on silicon carbide (SiC) power MOSFETs , 2013, 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

[71]  Matti Mantysalo,et al.  Inkjet filling of TSVs with silver nanoparticle ink , 2014, Proceedings of the 5th Electronics System-integration Technology Conference (ESTC).

[72]  D. Fleetwood,et al.  An overview of radiation effects on electronics in the space telecommunications environment , 2000 .

[73]  Shichang Zou,et al.  Analysis of Single-Event Effects in a Radiation-Hardened Low-Jitter PLL Under Heavy Ion and Pulsed Laser Irradiation , 2017, IEEE Transactions on Nuclear Science.

[74]  Joungho Kim,et al.  Power/ground noise coupling comparison and analysis in silicon, organic and glass interposers , 2016, 2016 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS).

[75]  G. Beyer,et al.  Via-middle through-silicon via with integrated airgap to zero TSV-induced stress impact on device performance , 2013, 2013 IEEE 63rd Electronic Components and Technology Conference.

[76]  Eun-San Kim,et al.  BEAM DYNAMICS ISSUES FOR A SUPERCONDUCTING LINEAR ACCELERATOR-BASED HIGH POWER HEAVY ION MACHINE , 2014 .

[77]  Nicolas K. Fontaine,et al.  Design Constraints of Photonic-Lantern Spatial Multiplexer Based on Laser-Inscribed 3-D Waveguide Technology , 2015, Journal of Lightwave Technology.

[78]  K. A. LaBel,et al.  TID and SEE Response of Advanced Samsung and Micron 4G NAND Flash Memories for the NASA MMS Mission , 2009, 2009 IEEE Radiation Effects Data Workshop.

[79]  F. Fournel,et al.  Innovative wafer-level encapsulation & underfill material for silicon interposer application , 2013, 2013 IEEE 63rd Electronic Components and Technology Conference.

[80]  J. P. Meier,et al.  Design of the Superconducting Extraction and Injection Quadrupole Doublet Modules for the SIS100 Heavy Ion Synchrotron , 2016, IEEE Transactions on Applied Superconductivity.

[81]  Fernanda Lima Kastensmidt,et al.  Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA , 2017, IEEE Transactions on Nuclear Science.

[82]  Sukjin Choi,et al.  A Study on the Design of Full-LTS 18-GHz ECR Ion Source for Heavy Ion Accelerator , 2016, IEEE Transactions on Applied Superconductivity.

[83]  Joungho Kim,et al.  TSV modeling and noise coupling in 3D IC , 2010, 3rd Electronics System Integration Technology Conference ESTC.

[84]  Matej Batic,et al.  Radioactive Decays in Geant4 , 2013, IEEE Transactions on Nuclear Science.

[85]  Madhavan Swaminathan,et al.  A Rigorous Model for Through-Silicon Vias With Ohmic Contact in Silicon Interposer , 2013, IEEE Microwave and Wireless Components Letters.

[86]  R. L. Pease,et al.  Analytical model for proton radiation effects in bipolar devices , 2002 .

[87]  Fan Hui,et al.  Energy and angular dependence of single event upsets in ESA SEU Monitor , 2016 .

[88]  M. Bakir,et al.  Thermal Design and Constraints for Heterogeneous Integrated Chip Stacks and Isolation Technology Using Air Gap and Thermal Bridge , 2014, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[89]  Edwin van der Heijden,et al.  Two Multiport De-Embedding Methods for Accurate On-Wafer Characterization of 60-GHz Differential Amplifiers , 2011, IEEE Transactions on Microwave Theory and Techniques.

[90]  M. Harrison,et al.  The RHIC design overview , 2003 .

[91]  Guifu Ding,et al.  Copper electroplating technique for efficient manufacturing of low-cost silicon interposers , 2016 .

[92]  Oded Raz,et al.  3D Packaging of Embedded Opto-Electronic Die and CMOS IC Based on Wet Etched Silicon Interposer , 2017, 2017 IEEE 67th Electronic Components and Technology Conference (ECTC).

[93]  Chongshen Song,et al.  Silicon interposer process development for advanced system integration , 2016 .

[94]  Jui-Chao Kuo,et al.  Current stressing-induced growth of Cu3Sn in Cu/Sn/Cu solder joints , 2011 .

[95]  Shinpei Ogawa,et al.  RF-MEMS switch with through-silicon via by the molten solder ejection method , 2012 .

[96]  Min Ding,et al.  Investigation of electromigration reliability of solder joint in flip-chip packages , 2007 .

[97]  David M. Hiemstra.  Guide to the 2015 IEEE Radiation Effects Data Workshop Record , 2016, 2016 IEEE Radiation Effects Data Workshop (REDW).

[98]  Wen-Yan Yin,et al.  Modeling of a pair of annular through silicon vias (TSV) , 2011, 2011 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS).

[99]  Albert T. Wu,et al.  Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump , 2017, JOM.

[100]  Nicolas K Fontaine,et al.  Free-space coherent optical communication with orbital angular, momentum multiplexing/demultiplexing using a hybrid 3D photonic integrated circuit. , 2014, Optics express.

[101]  Hong Wang,et al.  Effect of External Factors on Copper Filling in 3D Integrated Through-Silicon-Vias (TSVs) , 2015 .

[102]  Jun Li,et al.  A Shielding Structure for Crosstalk Reduction in Silicon Interposer , 2016, IEEE Microwave and Wireless Components Letters.

[103]  Don Son Jiang,et al.  Effect of Sn grain orientation and strain distribution in 20-μm-diameter microbumps on crack formation under thermal cycling tests , 2017, Electronic Materials Letters.

[104]  Joungho Kim,et al.  Signal Integrity Design and Analysis of a Multilayer Test Interposer for LPDDR4 Memory Test With Silicone Rubber-Based Sheet Contact , 2017, IEEE Transactions on Electromagnetic Compatibility.

[105]  Sying-Jyan Wang,et al.  Layout-Aware Optimized Prebond Silicon Interposer Test Synthesis , 2017, IEEE Design & Test.

[106]  D Pham.  Advanced MEMS Packaging , 2011 .

[107]  Z. Zhang,et al.  Application of electron backscatter diffraction to the study on orientation distribution of intermetallic compounds at heterogeneous interfaces (Sn/Ag and Sn/Cu) , 2010 .

[108]  J. Yook,et al.  Silicon-core Coaxial Through Silicon Via for Low-loss RF Si-interposer , 2017, IEEE Microwave and Wireless Components Letters.

[109]  G. Stemme,et al.  Very high aspect ratio through silicon vias (TSVs) using wire bonding , 2013, 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII).

[110]  Luigi Dilillo,et al.  A calculation method to estimate single event upset cross section , 2017, Microelectron. Reliab..

[111]  Ali Adibi,et al.  On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform. , 2015, Nano letters.

[112]  Yu Zhang,et al.  High-Density Wafer-Scale 3-D Silicon-Photonic Integrated Circuits , 2018, IEEE Journal of Selected Topics in Quantum Electronics.

[113]  Johann M. Heuser,et al.  Vertex detector upgrade plans for the PHENIX experiment at RHIC , 2003 .

[114]  E. Vianello,et al.  Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO 2 -Based RRAM Cells , 2017 .

[115]  J. Rodriguez,et al.  Demonstration of a 4 Mb, high density ferroelectric memory embedded within a 130 nm, 5 LM Cu/FSG logic process , 2002, Digest. International Electron Devices Meeting,.

[116]  Martin L. Green,et al.  Precursor ion damage and angular dependence of single event gate rupture in thin oxides , 1998 .

[117]  H. Philipsen,et al.  Scalable Through Silicon Via with polymer deep trench isolation for 3D wafer level packaging , 2009, 2009 59th Electronic Components and Technology Conference.

[118]  Zhan Zhang,et al.  A Study on the Optimization of an HTS Quadrupole Magnet System for a Heavy Ion Accelerator Through Evolution Strategy , 2016, IEEE Transactions on Applied Superconductivity.

[119]  Klaus-Dieter Lang,et al.  Efficient Total Crosstalk Analysis of Large Via Arrays in Silicon Interposers , 2016, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[120]  Kenneth A. LaBel,et al.  Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory , 2017, IEEE Transactions on Nuclear Science.

[121]  Yin Hang,et al.  Watt-Level Continuous-Wave and Black Phosphorus Passive Q-Switching Operation of Ho3+,Pr 3+:LiLuF4 Bulk Laser at 2.95 μm , 2018, IEEE Journal of Selected Topics in Quantum Electronics.

[122]  Bin Wang,et al.  Influence of heavy ion flux on single event effect testing in memory devices , 2017 .

[123]  A. Bensoussan,et al.  TCAD simulation of the single event effects in normally-off GaN transistors after heavy ion radiation , 2016, 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

[124]  Adam R. Duncan,et al.  Leakage Current Degradation of Gallium Nitride Transistors Due to Heavy Ion Tests , 2015, 2015 IEEE Radiation Effects Data Workshop (REDW).

[125]  Cemal Basaran,et al.  IEEE COMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY SOCIETY , 2010 .

[126]  B. Xie,et al.  Novel sequential electro-chemical and thermo-mechanical simulation methodology for annular through-silicon-via (TSV) design , 2010, 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).

[127]  Kwang-Seong Choi,et al.  Characterization of transmission lines with through-silicon-vias and bump joints on high-resistivity Si interposers for RF three-dimensional modules , 2016 .

[128]  E. G. Stassinopoulos,et al.  The space radiation environment for electronics , 1988, Proc. IEEE.

[129]  Matti Mäntysalo,et al.  Combination of E-Jet and Inkjet Printing for Additive Fabrication of Multilayer High-Density RDL of Silicon Interposer , 2017, IEEE Transactions on Electron Devices.

[130]  John D. Cressler,et al.  Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs , 2017, IEEE Transactions on Nuclear Science.

[131]  G. Lo,et al.  Novel integration technique for silicon/III-V hybrid laser. , 2014, Optics express.

[132]  Yann Lamy,et al.  Silicon interposer: A versatile platform towards full-3D integration of wireless systems at millimeter-wave frequencies , 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

[133]  Chulsoon Hwang,et al.  Novel De-Embedding Methodology and Broadband Microprobe Measurement for Through-Silicon Via Pair in Silicon Interposer , 2017, IEEE Transactions on Electromagnetic Compatibility.

[134]  N. Ikeda,et al.  Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout , 2006, IEEE Transactions on Nuclear Science.

[135]  Eun-San Kim,et al.  Beam Dynamics for High-Power Superconducting Heavy-Ion Linear Accelerator of RAON , 2016, IEEE Transactions on Nuclear Science.

[136]  J. Guthrie,et al.  Numerical study of microbump failure in 3D microelectronic structures , 2016, Microelectron. Reliab..

[137]  Oded Raz,et al.  Wet-Etched Three-Level Silicon Interposer for 3-D Embedding and Connecting of Optoelectronic Dies and CMOS ICs , 2018, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[138]  Chang-Woo Lee,et al.  Advanced TSV filling method with Sn alloy and its reliability , 2012, 2011 IEEE International 3D Systems Integration Conference (3DIC), 2011 IEEE International.

[139]  A. Farcy,et al.  Modeling and Frequency Performance Analysis of Through Silicon Capacitors in Silicon Interposers , 2017, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[140]  Ximeng Chen,et al.  Geant4 simulation of transmission of ions through insulating nanocapillaries , 2014 .