4H-SiC Trench Structure Fabrication with Al2O3 Etching Mask

Trench structure etching is one of the most important processes for the fabrication of 4H-SiC Trench MOSFETs. This paper introduced Al2O3 as an etching mask for the fabrication of trench structures. The effect of dry etching parameters to the shape of trench structures were studied systematically. Micro trenches were successfully eliminated from trench structure etching process and preliminary trench MOSFET test structures were fabricated and characterized.