Design and characteristics of InGaAs/InP composite-channel HFET's

A design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as heterostructure field-effect transistors is presented for the first time. This novel channel structure takes advantage of both the high drift velocity and low impact ionization of InP at high electric fields as well as the high electron mobility of InGaAs at low electric fields. It is shown that the doping density of the InP subchannel is the key parameter to realize the advantages of the composite channel. A very high transconductance of 1.29 S/mm and a current gain cutoff frequency of 68.7 GHz are achieved with 0.6 and 0.7 /spl mu/m gates, respectively. The average velocity of electrons in the composite channel is 2.9/spl times/10/sup 7/ cm/s. The devices have no kink phenomena in their I-V characteristics possibly due to low impact ionization in the InP subchannel. >

[1]  M. Matloubian,et al.  Ultra-high breakdown high-performance AlInAs/GaInAs/InP power HEMTs , 1993, Proceedings of IEEE International Electron Devices Meeting.

[2]  Michael A. Littlejohn,et al.  Velocity‐field characteristics of Ga1−xInxP1−yAsy quaternary alloys , 1977 .

[3]  April S. Brown,et al.  InP-based inverted high electron mobility transistors , 1991 .

[4]  M. Inoue,et al.  Real space hot electron distributions and transfer effects in heterostructures , 1988 .

[5]  April Brown,et al.  50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors , 1992 .

[6]  T. Enoki,et al.  Delay time analysis for 0.4- to 5- mu m-gate InAlAs-InGaAs HEMTs , 1990, IEEE Electron Device Letters.

[7]  K. Kato,et al.  Analysis of Kink Characteristics in Silicon-on-Insulator MOSFET's Using Two-Carrier Modeling , 1985, IEEE Journal of Solid-State Circuits.

[8]  April Brown,et al.  Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs , 1989, International Technical Digest on Electron Devices Meeting.

[9]  M. Matloubian,et al.  650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors , 1992, IEEE Electron Device Letters.

[10]  P.M. Smith,et al.  W-band low-noise InAlAs/InGaAs lattice-matched HEMTs , 1990, IEEE Electron Device Letters.

[11]  H. Hier,et al.  Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs , 1988, IEEE Electron Device Letters.

[12]  T. Enoki,et al.  InGaAs/InP double channel HEMT on InP , 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.