Transient Analysis of PT-IGBTs at High Temperature

In this paper, excess minority carrier distribution in drift and buffer layers and accumulated charges for PT IGBT have been, for the first time, analytically expressed with different transient times, lifetimes and temperatures Furthermore those parameters are also expressed with temperature to predict the transient response which are critical to the real operation Active base region has been chosen to extract the temperature dependency of the device by including the buffer layer which is important but neglected due to the complexity up to now.